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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
BCR 135S E6327 | Infineon Technologies | TRANSISTOR NPN DGTL AF SOT-363 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 10K · Resistor - Emitter Base (R2) (Ohms): 47K · DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 150MHz · Power - Max: 250mW · Transistor Type: 2 NPN - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | from 0,05 | Additional information Find at suppliers | |
BCR 119S E6433 | Infineon Technologies | TRANSISTOR NPN DGTL AF SOT-363 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 150MHz · Power - Max: 250mW · Transistor Type: 2 NPN - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | from 0,05 | Additional information Find at suppliers | |
BCR 119S E6327 | Infineon Technologies | TRANSISTOR NPN DGTL AF SOT-363 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 150MHz · Power - Max: 250mW · Transistor Type: 2 NPN - Pre-Biased (Dual) · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | from 0,05 | Additional information Find at suppliers |
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