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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays, Pre-Biased
 
BCR 08PN E6433

BCR 08PN E6433 — TRANSISTOR ARRAY NPN/PNP SOT-363

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2K
Resistor - Emitter Base (R2) (Ohms)47K
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100mA
Frequency - Transition170MHz
Power - Max250mW
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Found under nameBCR08PNE6433XT, SP000083564
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BCR 08PN E6327BCR 08PN E6327Infineon TechnologiesTRANS ARRAY NPN/PNP DGTL SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 170MHz  ·  Power - Max: 250mW  ·  Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BCR 108S E6433BCR 108S E6433Infineon TechnologiesTRANSISTOR NPN DGTL SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 170MHz  ·  Power - Max: 250mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,05Additional information
Find at suppliers
BCR 108S E6327BCR 108S E6327Infineon TechnologiesTRANSISTOR NPN DGTL SOT-363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 170MHz  ·  Power - Max: 250mW  ·  Transistor Type: 2 NPN - Pre-Biased (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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