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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays
 
NST45011MW6T1G

NST45011MW6T1G — TRANSISTOR NPN .1A 45V SOT-363

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic250mV @ 0.5mA, 10mA
Current - Collector (Ic) (Max)100mA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Power - Max380mW
Frequency - Transition100MHz
Transistor Type2 NPN (Dual)
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Found under nameNST45011MW6T1GOSCT
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BC847BDW1T1GBC847BDW1T1GON SemiconductorTRANS NPN DUAL 45V 100MA SOT-363
Voltage - Collector Emitter Breakdown (Max): 45V  ·  Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA  ·  Current - Collector (Ic) (Max): 100mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V  ·  Power - Max: 380mW  ·  Frequency - Transition: 100MHz  ·  Transistor Type: 2 NPN (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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BC847BPDW1T1GBC847BPDW1T1GON SemiconductorTRANS NPN/PNP DUAL 45V SOT-363
Voltage - Collector Emitter Breakdown (Max): 45V  ·  Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA  ·  Current - Collector (Ic) (Max): 100mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V  ·  Power - Max: 380mW  ·  Frequency - Transition: 100MHz  ·  Transistor Type: 2 NPN (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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