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Discrete Semiconductor Products  ·  Transistors (BJT) - Arrays

 

EMT1DXV6T5G — TRANS PNP GP DUAL 60V SOT-563

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector (Ic) (Max)100mA
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Power - Max500mW
Frequency - Transition140MHz
Transistor Type2 PNP (Dual)
Mounting TypeSurface Mount
Package / CaseSOT-563
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
EMT1DXV6T1GON SemiconductorTRANS PNP GP DUAL 60V SOT-563
Voltage - Collector Emitter Breakdown (Max): 60V  ·  Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 100mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V  ·  Power - Max: 500mW  ·  Frequency - Transition: 140MHz  ·  Transistor Type: 2 PNP (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
from 0,08Additional information
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EMT1DXV6T5ON SemiconductorTRANS PNP GP DUAL 60V SOT-563
Voltage - Collector Emitter Breakdown (Max): 60V  ·  Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 100mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V  ·  Power - Max: 500mW  ·  Frequency - Transition: 140MHz  ·  Transistor Type: 2 PNP (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
Additional information
Find at suppliers
EMT1DXV6T1ON SemiconductorTRANS PNP GP DUAL 60V SOT-563
Voltage - Collector Emitter Breakdown (Max): 60V  ·  Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 100mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V  ·  Power - Max: 500mW  ·  Frequency - Transition: 140MHz  ·  Transistor Type: 2 PNP (Dual)  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-563
Additional information
Find at suppliers

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