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NESG2031M05-A

NESG2031M05-A — TRANS NPN 2GHZ SOT-343

ManufacturerNEC
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)5V
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)0.8dB ~ 1.1dB @ 2GHz
Gain15dB ~ 17dB
Power - Max175mW
Transistor TypeNPN
DC Current Gain (hFE) (Min) @ Ic, Vce130 @ 5mA, 2V
Current - Collector (Ic) (Max)35mA
Mounting TypeSurface Mount
Package / CaseSC-70-4, SC-82-4, SOT-323-4, SOT-343
Compression Point (P1dB)13dBm
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
NESG2031M05-T1-ANESG2031M05-T1-ANECTRANS NPN 2GHZ SOT-343
Voltage - Collector Emitter Breakdown (Max): 5V  ·  Frequency - Transition: 25GHz  ·  Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 2GHz  ·  Gain: 15dB ~ 17dB  ·  Power - Max: 175mW  ·  Transistor Type: NPN  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V  ·  Current - Collector (Ic) (Max): 35mA  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343  ·  Compression Point (P1dB): 13dBm
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Similar by characteristics
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NESG2031M16-ANECTRANS NPN 2GHZ M16
Voltage - Collector Emitter Breakdown (Max): 5V  ·  Frequency - Transition: 25GHz  ·  Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 2GHz  ·  Gain: 15dB ~ 17dB  ·  Power - Max: 175mW  ·  Transistor Type: NPN  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V  ·  Current - Collector (Ic) (Max): 35mA  ·  Mounting Type: Surface Mount  ·  Package / Case: M16  ·  Compression Point (P1dB): 13dBm
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NESG2031M16-T3-ANECTRANS NPN 2GHZ M16
Voltage - Collector Emitter Breakdown (Max): 5V  ·  Frequency - Transition: 25GHz  ·  Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 2GHz  ·  Gain: 15dB ~ 17dB  ·  Power - Max: 175mW  ·  Transistor Type: NPN  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V  ·  Current - Collector (Ic) (Max): 35mA  ·  Mounting Type: Surface Mount  ·  Package / Case: M16  ·  Compression Point (P1dB): 13dBm
from 0,47Additional information
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