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Discrete Semiconductor Products  ·  RF Transistors (BJT)
 
NE68833-A

- Dimensional Drawing

NE68833-A — TRANS NPN 2GHZ SOT-23

ManufacturerNEC
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition8.5GHz
Noise Figure (dB Typ @ f)1.7dB ~ 2.5dB @ 2GHz
Gain2.5dB ~ 3.5dB
Power - Max200mW
Transistor TypeNPN
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 3mA, 1V
Current - Collector (Ic) (Max)100mA
Mounting TypeSurface Mount
Package / CaseSOT-23
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
NE68833-T1-ANECTRANS NPN 2GHZ SOT-23
Voltage - Collector Emitter Breakdown (Max): 6V  ·  Frequency - Transition: 8.5GHz  ·  Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz  ·  Gain: 2.5dB ~ 3.5dB  ·  Power - Max: 200mW  ·  Transistor Type: NPN  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V  ·  Current - Collector (Ic) (Max): 100mA  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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