Discrete Semiconductor Products · RF Transistors (BJT)

Manufacturer	NEC
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	9.5GHz
Noise Figure (dB Typ @ f)	1.7dB ~ 2.5dB @ 2GHz
Gain	3dB ~ 4dB
Power - Max	125mW
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 3mA, 1V
Current - Collector (Ic) (Max)	100mA
Mounting Type	Surface Mount
Package / Case	Mini 3P
Found under name	NE68819-ATR

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	NE68819-A	NEC	TRANSISTOR NPN 2GHZ SC-90 Voltage - Collector Emitter Breakdown (Max): 6V · Frequency - Transition: 9.5GHz · Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz · Gain: 3dB ~ 4dB · Power - Max: 125mW · Transistor Type: NPN · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V · Current - Collector (Ic) (Max): 100mA · Mounting Type: Surface Mount · Package / Case: 3-XSOF, MiniMold	from 0,40	Additional information Find at suppliers
	NE68819-T1	NEC	TRANS NPN 2GHZ SMD Voltage - Collector Emitter Breakdown (Max): 6V · Frequency - Transition: 9.5GHz · Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz · Gain: 3dB ~ 4dB · Power - Max: 125mW · Transistor Type: NPN · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V · Current - Collector (Ic) (Max): 100mA · Mounting Type: Surface Mount · Package / Case: Surface Mount		Additional information Find at suppliers

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