Discrete Semiconductor Products · RF Transistors (BJT)

Manufacturer	Avago Technologies US Inc.
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	2dB ~ 3dB @ 2GHz ~ 4GHz
Gain	13.5dB ~ 10dB
Power - Max	600mW
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 35mA, 8V
Current - Collector (Ic) (Max)	80mA
Mounting Type	Surface Mount
Package / Case	4-SMD (35 micro-X)
Compression Point (P1dB)	21dBm ~ 20.5dBm
Found under name	516-1858, AT-42035G-ND

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	AT-42036-TR1G	Avago Technologies US Inc.	TRANS NPN BIPO 12V 80MA 36-SMD Voltage - Collector Emitter Breakdown (Max): 12V · Frequency - Transition: 8GHz · Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz · Gain: 13.5dB ~ 10dB · Power - Max: 600mW · Transistor Type: NPN · DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V · Current - Collector (Ic) (Max): 80mA · Mounting Type: Surface Mount · Package / Case: 4-SMD (36 micro-X) · Compression Point (P1dB): 21dBm ~ 20.5dBm	from 4,21	Additional information Find at suppliers
	AT-42036-BLKG	Avago Technologies US Inc.	TRANS NPN BIPO 12V 80MA 36-SMD Voltage - Collector Emitter Breakdown (Max): 12V · Frequency - Transition: 8GHz · Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz · Gain: 13.5dB ~ 10dB · Power - Max: 600mW · Transistor Type: NPN · DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V · Current - Collector (Ic) (Max): 80mA · Mounting Type: Surface Mount · Package / Case: 4-SMD (36 micro-X) · Compression Point (P1dB): 21dBm ~ 20.5dBm	from 6,67	Additional information Find at suppliers

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