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Discrete Semiconductor Products  ·  Diodes, Rectifiers - Single
 
1N4006

- Dimensional Drawing

1N4006 — DIODE GEN PURPOSE 800V 1A DO41

ManufacturerFairchild Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - DC Reverse (Vr) (Max)800V
Voltage - Forward (Vf) (Max) @ If1.1V @ 1A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5µA @ 800V
Diode TypeStandard
SpeedStandard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F15pF @ 4V, 1MHz
Mounting TypeThrough Hole, Axial
Package / CaseDO-41, Axial
Found under name1N4006FSDKR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
1N4006GP1N4006GPFairchild SemiconductorDIODE GPP GEN PURP 800V 1A DO41
Voltage - DC Reverse (Vr) (Max): 800V  ·  Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A  ·  Current - Average Rectified (Io): 1A  ·  Current - Reverse Leakage @ Vr: 5µA @ 800V  ·  Diode Type: Standard  ·  Speed: Standard Recovery >500ns, > 200mA (Io)  ·  Capacitance @ Vr, F: 15pF @ 4V, 1MHz  ·  Mounting Type: Through Hole, Axial  ·  Package / Case: DO-41, Axial
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