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Дискретные полупроводники  ·  Программируемые однопереходные транзисторы

PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
2N6027RLRA2N6027RLRAON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 1.6V  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 50µA  ·  Current - Peak: 2µA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N6027RL1GON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 1.6V  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 50µA  ·  Current - Peak: 2µA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N6027RLRAG2N6027RLRAGON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 1.6V  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 50µA  ·  Current - Peak: 2µA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N6028RLRPGON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 600mV  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 25µA  ·  Current - Peak: 150nA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N6027RL12N6027RL1ON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 1.6V  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 50µA  ·  Current - Peak: 2µA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N6028RLRA2N6028RLRAON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 600mV  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 25µA  ·  Current - Peak: 150nA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N60272N6027ON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 1.6V  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 50µA  ·  Current - Peak: 2µA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N6028RLRM2N6028RLRMON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 600mV  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 25µA  ·  Current - Peak: 150nA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N6028RLRMG2N6028RLRMGON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 600mV  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 25µA  ·  Current - Peak: 150nA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N6028G2N6028GON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 600mV  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 25µA  ·  Current - Peak: 150nA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N6028RLRP2N6028RLRPON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 600mV  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 25µA  ·  Current - Peak: 150nA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N6028RLRAG2N6028RLRAGON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 600mV  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 25µA  ·  Current - Peak: 150nA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N6027G2N6027GON SemiconductorTRANS PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 1.6V  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 50µA  ·  Current - Peak: 2µA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N60282N6028ON SemiconductorTHYRISTOR PROG UNIJUNCT 40V TO92
Voltage: 40V  ·  Power Dissipation (Max): 300mW  ·  Voltage - Output: 11V  ·  Voltage - Offset (Vt): 600mV  ·  Current - Gate to Anode Leakage (Igao): 10nA  ·  Current - Valley (Iv): 25µA  ·  Current - Peak: 150nA  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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