TPCS8209(TE12L,Q) — MOSFET 2N-CH 20V 5A 8-TSSOP
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| Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
| TPCS8210(TE12L,Q,M | Toshiba | MOSFET N-CH DUAL 20V 5A 2-3R1E Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1280pF @ 10V · FET Polarity: 2 N-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 600mW · Mounting Type: Surface Mount | from 0,25 | Additional information Find at suppliers | |
| TPCS8209(TE12L,Q,M | Toshiba | MOSFET N-CH DUAL 20V 5A 2-3R1E Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1280pF @ 10V · FET Polarity: 2 N-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 600mW · Mounting Type: Surface Mount | from 0,25 | Additional information Find at suppliers | |
| TPCS8210(TE12L,Q) | Toshiba | MOSFET N-CH DUAL 20V 5A 2-3R1E Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1280pF @ 10V · FET Polarity: 2 N-Channel (Dual) · FET Feature: Logic Level Gate · Power - Max: 600mW · Mounting Type: Surface Mount | from 0,36 | Additional information Find at suppliers |
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