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Discrete Semiconductor Products  ·  MOSFETs - Arrays

 
FDG6313N

FDG6313N — MOSFET N-CH DUAL 25V SC70-6

ManufacturerFairchild Semiconductor
Harmful substancesRoHS   Lead-free
Pay attentionMold Compound Change 12/Dec/2007
Rds On (Max) @ Id, Vgs450 mOhm @ 500mA, 4.5V
Drain to Source Voltage (Vdss)25V
Gate Charge (Qg) @ Vgs2.3nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C500mA
Input Capacitance (Ciss) @ Vds50pF @ 10V
FET Polarity2 N-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max300mW
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
FDG6303NFDG6303NFairchild SemiconductorIC FET DGTL N-CHAN DUAL SC70-6
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 2.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 10V  ·  FET Polarity: 2 N-Channel (Dual)  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,09
from 0,38
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FDG6303N_D87ZFDG6303N_D87ZFairchild SemiconductorMOSFET N-CH DUAL 25V SC70-6
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 2.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 10V  ·  FET Polarity: 2 N-Channel (Dual)  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
Additional information
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