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APTM100H45SCTG — MOSFET FULL BRIDGE SER/SIC SP4

ManufacturerMicrosemi-PPG
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs540 mOhm @ 9A, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Gate Charge (Qg) @ Vgs154nC @ 10V
Current - Continuous Drain (Id) @ 25° C18A
Input Capacitance (Ciss) @ Vds4350pF @ 25V
FET Polarity4 N-Channel (H-Bridge)
FET FeatureStandard
Power - Max357W
Mounting TypeChassis Mount
Package / CaseSP4 Module
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
APTM100H45STGMicrosemi-PPGMOSFET FULL BRIDGE SER/PAR SP4
Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: 4 N-Channel (H-Bridge)  ·  FET Feature: Standard  ·  Power - Max: 357W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP4 Module
from 171,03Additional information
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
APTM100H45FT3GMicrosemi-PPGMOSFET MODULE FULL BRIDGE SP3
Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: 4 N-Channel (H-Bridge)  ·  FET Feature: Standard  ·  Power - Max: 357W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP3
from 133,61Additional information
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