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Discrete Semiconductor Products  ·  MOSFETs - Arrays
 
APTM100A13SG

APTM100A13SG — PWR MODULE MOSFET 1000V 65A SP6

ManufacturerMicrosemi-PPG
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs156 mOhm @ 32.5A, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Gate Charge (Qg) @ Vgs562nC @ 10V
Current - Continuous Drain (Id) @ 25° C65A
Input Capacitance (Ciss) @ Vds15200pF @ 25V
FET Polarity2 N-Channel (Half Bridge)
FET FeatureStandard
Power - Max1250W
Mounting TypeChassis Mount
Package / CaseSP6
Found under nameAPTM100A13SG-ND, APTM100A13SGMI
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
APTM100A13DGMicrosemi-PPGMOSFET PHASE LEG SERIES DIO SP6
Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 562nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 15200pF @ 25V  ·  FET Polarity: 2 N-Channel (Half Bridge)  ·  FET Feature: Standard  ·  Power - Max: 1250W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
from 278,28Additional information
Find at suppliers
APTM100A13SCGMicrosemi-PPGPWR MODULE MOSFET 1000V 65A SP6
Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 562nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 15200pF @ 25V  ·  FET Polarity: 2 N-Channel (Half Bridge)  ·  FET Feature: Standard  ·  Power - Max: 1250W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
from 324,52
from 621,99		Additional information
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