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Discrete Semiconductor Products  ·  MOSFETs - Single
 
STF40N20

- Dimensional Drawing

STF40N20 — MOSFET N-CH 200V 40A TO-220FP

ManufacturerSTMicroelectronics
Harmful substancesRoHS   Lead-free
SeriesSTripFET™
Rds On (Max) @ Id, Vgs45 mOhm @ 20A, 10V
Drain to Source Voltage (Vdss)200V
Gate Charge (Qg) @ Vgs75nC @ 10V
Current - Continuous Drain (Id) @ 25° C40A
Input Capacitance (Ciss) @ Vds2500pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max40W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)
Found under name497-5006-5
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Series: STripFET™  ·  Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 9.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 1425pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 5.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: PolarPak®
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Series: STripFET™  ·  Rds On (Max) @ Id, Vgs: 18 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 70W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Series: STripFET™  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 460pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Series: STripFET™  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 36A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Series: STripFET™  ·  Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1650pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
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STB80NF55-08-1STB80NF55-08-1STMicroelectronicsMOSFET N-CH 55V 80A I2PAK
Series: STripFET™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 155nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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