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SPD01N60C3

- Dimensional Drawing

SPD01N60C3 — MOSFET N-CH 650V 0.8A TO-252

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
SeriesCoolMOS™
Rds On (Max) @ Id, Vgs6 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)650V
Gate Charge (Qg) @ Vgs5nC @ 10V
Current - Continuous Drain (Id) @ 25° C800mA
Input Capacitance (Ciss) @ Vds100pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max11W
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
Found under nameSP000012114, SP000307382, SPD01N60C3-ND, SPD01N60C3INTR, SPD01N60C3XT
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SPA11N65C3SPA11N65C3Infineon TechnologiesMOSFET N-CH 650V 11A TO-220
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 33W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
from 1,27
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SPB20N60S5SPB20N60S5Infineon TechnologiesMOSFET N-CH 600V 20A TO-263
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 103nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 3000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 208W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,92
from 2,11		Additional information
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SPB07N60S5SPB07N60S5Infineon TechnologiesMOSFET N-CH 600V 7.3A TO-263
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.3A  ·  Input Capacitance (Ciss) @ Vds: 970pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 83W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,24
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IPI60R165CPInfineon TechnologiesMOSFET N-CH 650V 21A TO-262
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2000pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 2,26Additional information
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SPW47N60C2SPW47N60C2Infineon TechnologiesMOSFET N-CH 600V 47A TO-247
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 286nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 8800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 415W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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SPP15N65C3Infineon TechnologiesMOSFET N-CH 650V 15A TO-220
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 63nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 156W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3
from 1,64Additional information
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SPA07N65C3SPA07N65C3Infineon TechnologiesMOSFET N-CH 650V 7.3A TO-220
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.3A  ·  Input Capacitance (Ciss) @ Vds: 790pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 32W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
from 1,67Additional information
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SPP03N60S5SPP03N60S5Infineon TechnologiesMOSFET N-CH 600V 3.2A TO-220AB
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.2A  ·  Input Capacitance (Ciss) @ Vds: 420pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 38W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
from 0,96
from 1,43		Additional information
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IPB60R250CPInfineon TechnologiesMOSFET N-CH 650V 12A TO263-3
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 104W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,54Additional information
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SPU03N60S5SPU03N60S5Infineon TechnologiesMOSFET N-CH 600V 3.2A TO-251
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.2A  ·  Input Capacitance (Ciss) @ Vds: 420pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 38W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
from 0,56
from 1,41		Additional information
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IPA50R199CPInfineon TechnologiesMOSFET N-CH 550V 17A TO220-3
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V  ·  Drain to Source Voltage (Vdss): 550V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 139W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
from 1,61Additional information
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SPI11N60S5SPI11N60S5Infineon TechnologiesMOSFET N-CH 600V 11A TO-262
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1460pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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SPA17N80C3SPA17N80C3Infineon TechnologiesMOSFET N-CH 800V 17A TO220FP
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 177nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 2320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 42W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220F
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IPP50R399CPInfineon TechnologiesMOSFET N-CH 560V 9A TO-220
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V  ·  Drain to Source Voltage (Vdss): 560V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 890pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 83W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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SPD04N50C3TInfineon TechnologiesMOSFET N-CH 560V 4.5A DPAK
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 560V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPB60R099CPAInfineon TechnologiesMOSFET N-CH 600V 31A TO263-3
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 255W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SPB21N50C3SPB21N50C3Infineon TechnologiesMOSFET N-CH 560V 21A TO-263
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V  ·  Drain to Source Voltage (Vdss): 560V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 208W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SPI15N60CFDInfineon TechnologiesMOSFET N-CH 650V 13.4A TO-262
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 330 mOhm @ 9.4A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13.4A  ·  Input Capacitance (Ciss) @ Vds: 1820pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 156W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,81Additional information
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SPA11N60C3SPA11N60C3Infineon TechnologiesMOSFET N-CH 650V 11A TO220FP
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 33W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
from 2,21
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IPB60R199CPInfineon TechnologiesMOSFET N-CH 650V 16A TO-263
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1520pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 139W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,69Additional information
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SPP21N50C3SPP21N50C3Infineon TechnologiesMOSFET N-CH 560V 21A TO-220AB
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V  ·  Drain to Source Voltage (Vdss): 560V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 208W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
from 2,59
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IPB50R299CPInfineon TechnologiesMOSFET N-CH 550V 12A TO-263
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V  ·  Drain to Source Voltage (Vdss): 550V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1190pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 104W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,12Additional information
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SPP07N60S5SPP07N60S5Infineon TechnologiesMOSFET N-CH 650V 7.3A TO-220AB
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.3A  ·  Input Capacitance (Ciss) @ Vds: 970pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 83W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
from 1,70
from 2,26		Additional information
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IPI60R099CPInfineon TechnologiesMOSFET N-CH 650V 31A TO-262
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 255W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 4,24Additional information
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SPU01N60C3SPU01N60C3Infineon TechnologiesMOSFET N-CH 650V 0.8A TO-251
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 800mA  ·  Input Capacitance (Ciss) @ Vds: 100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 11W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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