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PMBF170,235 — MOSFET N-CH TRENCH 60V SOT-23

ManufacturerNXP Semiconductors
Harmful substancesRoHS   Lead-free
SeriesTrenchMOS™
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C300mA
Input Capacitance (Ciss) @ Vds40pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max830mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 77 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 32.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 32.7A  ·  Input Capacitance (Ciss) @ Vds: 1870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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IRF640,127IRF640,127NXP SemiconductorsMOSFET N-CH 200V 16A TO-220AB
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 63nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 136W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 68.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3693pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 157W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6760pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 230W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 7124pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 254W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.05nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 550mA  ·  Input Capacitance (Ciss) @ Vds: 23pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 530mW  ·  Mounting Type: Surface Mount  ·  Package / Case: EMT3 (SOT-416, SC-75-3)
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3619pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 167W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 125 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 338pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 36W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 7124pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 254W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 67A  ·  Input Capacitance (Ciss) @ Vds: 4034pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 157W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.1nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.2A  ·  Input Capacitance (Ciss) @ Vds: 495pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-74-6
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4901pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 203W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2470pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK6213-30A,118NXP SemiconductorsMOSFET N-CH TRENCH 30V 55A D-PAK
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 1986pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 102W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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