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NTMSD6N303R2 — MOSFET N-CH 30V 6A 8-SOIC
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| Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
 | NTMSD3P303R2G | ON Semiconductor | MOSFET P-CH 30V 2.34A 8-SOIC Series: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 24V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Additional information Find at suppliers | |
| NTMSD3P102R2G | ON Semiconductor | MOSFET P-CH 20V 2.34A 8-SOIC Series: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Additional information Find at suppliers | |
| NTTD4401FR2G | ON Semiconductor | MOSFET P-CHAN 20V 3.3A MICRO8 Series: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 780mW · Mounting Type: Surface Mount · Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP, | from 0,32 from 0,64 | Additional information Find at suppliers | |
| NTMSD6N303R2SG | ON Semiconductor | MOSFET N-CH 30V 6A 8-SOIC Series: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 950pF @ 24V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,43 | Additional information Find at suppliers |
| NTTD4401FR2 | ON Semiconductor | MOSFET P-CH 20V 2.4A 8MICRO Series: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 780mW · Mounting Type: Surface Mount · Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP, | Additional information Find at suppliers | ||
| NTLGF3501NT1G | ON Semiconductor | MOSFET N-CH 20V 2.8A 6-DFN Series: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.8A · Input Capacitance (Ciss) @ Vds: 275pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN | Additional information Find at suppliers | ||
| NTLGF3501NT2G | ON Semiconductor | MOSFET N-CH 20V 2.8A 6-DFN Series: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.8A · Input Capacitance (Ciss) @ Vds: 275pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN | from 0,41 | Additional information Find at suppliers | |
| NTMSD3P102R2 | ON Semiconductor | MOSFET P-CH 20V 2.34A 8-SOIC Series: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Additional information Find at suppliers | |
| NTLGF3402PT1G | ON Semiconductor | MOSFET P-CH 20V 2.3A 6-DFN Series: FETKY™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 350pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN | Additional information Find at suppliers | ||
| MMDFS6N303R2 | ON Semiconductor | MOSFET N-CH 30V 6A 8-SOIC Series: FETKY™ · Rds On (Max) @ Id, Vgs: 35 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 31.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 600pF @ 24V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Additional information Find at suppliers | |
| NTMSD6N303R2G | ON Semiconductor | MOSFET N-CH 30V 6A 8-SOIC Series: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 950pF @ 24V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,43 | Additional information Find at suppliers |
| NTMSD2P102LR2G | ON Semiconductor | MOSFET P-CH 20V 2.3A 8-SOIC Series: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 710mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Additional information Find at suppliers | |
| NTMSD2P102LR2 | ON Semiconductor | MOSFET P-CH 20V 2.3A 8-SOIC Series: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 710mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Additional information Find at suppliers | |
| NTLGF3402PT2G | ON Semiconductor | MOSFET P-CH 20V 2.3A 6-DFN Series: FETKY™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 350pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-DFN | from 0,41 | Additional information Find at suppliers | |
| NTMSD3P102R2SG | ON Semiconductor | MOSFET P-CH 20V 2.34A 8-SOIC Series: FETKY™ · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.34A · Input Capacitance (Ciss) @ Vds: 750pF @ 16V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 730mW · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,38 | Additional information Find at suppliers |
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