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Discrete Semiconductor Products  ·  MOSFETs - Single
 

IXTA05N100 — MOSFET N-CH 1000V 0.75A TO-263

ManufacturerIXYS
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs17 Ohm @ 375mA, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Gate Charge (Qg) @ Vgs7.8nC @ 10V
Current - Continuous Drain (Id) @ 25° C750mA
Input Capacitance (Ciss) @ Vds260pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max40W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
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Rds On (Max) @ Id, Vgs: 1 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 4700pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: TO-268
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Series: PolarHT™  ·  Rds On (Max) @ Id, Vgs: 66 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 52A  ·  Input Capacitance (Ciss) @ Vds: 3490pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 400W  ·  Mounting Type: Through Hole  ·  Package / Case: PLUS-220
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IXTY3N60PIXTY3N60PIXYSMOSFET N-CH 600V 3A D-PAK
Series: PolarHV™  ·  Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 9.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 411pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IXFK73N30IXFK73N30IXYSMOSFET N-CH 300V 73A TO-264AA
Series: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 360nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 73A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264AA
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IXFH12N100PIXYSMOSFET N-CH 1000V 12A TO-247
Series: Polar™  ·  Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 4080pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 463W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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IXTA1N80IXYSMOSFET N-CH 800V 750MA TO-263
Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 8.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 750mA  ·  Input Capacitance (Ciss) @ Vds: 220pf @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IXTQ24N55QIXYSMOSFET N-CH 550V 24A TO-3P
Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 550V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 3000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 400W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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IXTQ30N50L2IXTQ30N50L2IXYSMOSFET N-CH 30A 500V TO-3P
Series: Linear L2™  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 240nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 8100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 400W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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