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Discrete Semiconductor Products  ·  MOSFETs - Single
 
IRFZ34S

IRFZ34S — MOSFET N-CH 60V 30A D2PAK

ManufacturerVishay/Siliconix
Rds On (Max) @ Id, Vgs50 mOhm @ 18A, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs46nC @ 10V
Current - Continuous Drain (Id) @ 25° C30A
Input Capacitance (Ciss) @ Vds1200pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max3.7W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
Found under name*IRFZ34S
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SI4413CDY-T1-GE3SI4413CDY-T1-GE3Vishay/SiliconixMOSFET P-CH 30V 8-SOIC
Drain to Source Voltage (Vdss): 30V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,02
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SI7431DP-T1-GE3Vishay/SiliconixMOSFET P-CH 200V 2.2A PPAK 8SOIC
Rds On (Max) @ Id, Vgs: 174 mOhm @ 3.8A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 135nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,88Additional information
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IRF644NSTRLPBFIRF644NSTRLPBFVishay/SiliconixMOSFET N-CH 250V 14A D2PAK
Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1060pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFI734GIRFI734GVishay/SiliconixMOSFET N-CH 450V 3.4A TO220FP
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 450V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.4A  ·  Input Capacitance (Ciss) @ Vds: 680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
from 2,12Additional information
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IRF730ALIRF730ALVishay/SiliconixMOSFET N-CH 400V 5.5A TO-262
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,09Additional information
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SI4401BDY-T1-GE3SI4401BDY-T1-GE3Vishay/SiliconixMOSFET P-CH 40V 8.7A 8-SOIC
Rds On (Max) @ Id, Vgs: 14 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 8.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 0,68
from 0,74		Additional information
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IRF634STRLIRF634STRLVishay/SiliconixMOSFET N-CH 250V 8.1A D2PAK
Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.1A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,25Additional information
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SI7463DP-T1-GE3SI7463DP-T1-GE3Vishay/SiliconixMOSFET P-CH 40V 11A PPAK 8SOIC
Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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IRFP460NPBFIRFP460NPBFVishay/SiliconixMOSFET N-CH 500V 20A TO-247AC
Rds On (Max) @ Id, Vgs: 240 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 124nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 3540pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRF530STRRPBFIRF530STRRPBFVishay/SiliconixMOSFET N-CH 100V 14A D2PAK
Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFUC20PBFIRFUC20PBFVishay/SiliconixMOSFET N-CH 600V 2A I-PAK
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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SI7413DN-T1-E3SI7413DN-T1-E3Vishay/SiliconixMOSFET P-CH 20V 8.4A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 51nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 8.4A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SI4488DY-T1-E3SI4488DY-T1-E3Vishay/SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.56W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRFD310PBFIRFD310PBFVishay/SiliconixMOSFET N-CH 400V 350MA 4-DIP
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 210mA, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 350mA  ·  Input Capacitance (Ciss) @ Vds: 170pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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IRF540SPBFIRF540SPBFVishay/SiliconixMOSFET N-CH 100V 28A D2PAK
Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFL41N15DIRFL41N15DVishay/SiliconixMOSFET N-CH 150V 41A D2PAK
Drain to Source Voltage (Vdss): 150V  ·  Current - Continuous Drain (Id) @ 25° C: 41A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRC740IRC740Vishay/SiliconixMOSFET N-CH 400V 10A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRL2203SIRL2203SVishay/SiliconixMOSFET N-CH 30V 100A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF740ASTRRPBFIRF740ASTRRPBFVishay/SiliconixMOSFET N-CH 400V 10A D2PAK
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1030pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF730STRLPBFIRF730STRLPBFVishay/SiliconixMOSFET N-CH 400V 5.5A D2PAK
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFBE20LVishay/SiliconixMOSFET N-CH 800V 1.8A TO-262
Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.8A  ·  Input Capacitance (Ciss) @ Vds: 530pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 54W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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SIA414DJ-T1-GE3SIA414DJ-T1-GE3Vishay/SiliconixMOSFET N-CH 8V 12A SC70-6
Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.7A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 4V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 19W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-70-6
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IRLR024TRRVishay/SiliconixMOSFET N-CH 60V 14A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFU4105ZTRVishay/SiliconixMOSFET N-CH 55V 30A I-PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRF9Z30PBFIRF9Z30PBFVishay/SiliconixMOSFET P-CH 50V 18A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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