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IRFZ34

IRFZ34 — MOSFET N-CH 60V 30A TO-220AB

ManufacturerVishay/Siliconix
Rds On (Max) @ Id, Vgs50 mOhm @ 18A, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs46nC @ 10V
Current - Continuous Drain (Id) @ 25° C30A
Input Capacitance (Ciss) @ Vds1200pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max88W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Found under name*IRFZ34
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SUM65N20-30-E3SUM65N20-30-E3Vishay/SiliconixMOSFET N-CH 200V 65A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 5100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,42
from 2,83
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IRFBC30IRFBC30Vishay/SiliconixMOSFET N-CH 600V 3.6A TO-220AB
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  Input Capacitance (Ciss) @ Vds: 660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 3,20Additional information
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SI3455ADV-T1-E3SI3455ADV-T1-E3Vishay/SiliconixMOSFET P-CH 30V 2.7A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
from 0,40
from 0,90
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IRFR110TRLVishay/SiliconixMOSFET N-CH 100V 4.3A DPAK
Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8.3nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  Input Capacitance (Ciss) @ Vds: 180pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,24Additional information
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IRF540PBFIRF540PBFVishay/SiliconixMOSFET N-CH 100V 28A TO-220AB
Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,12
from 2,88
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IRLIZ14GPBFIRLIZ14GPBFVishay/SiliconixMOSFET N-CH 60V 8A TO220FP
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.8A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 8.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 27W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
from 0,77
from 1,98
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IRFPS30N60KPBFIRFPS30N60KPBFVishay/SiliconixMOSFET N-CH 600V 30A SUPER247
Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 220nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 5870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Through Hole  ·  Package / Case: Super-247
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IRF630IRF630Vishay/SiliconixMOSFET N-CH 200V 9A TO-220AB
Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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SI1013R-T1-GE3SI1013R-T1-GE3Vishay/SiliconixMOSFET P-CH 20V 350MA SC-75A
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 350mA  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
from 0,11
from 0,14
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IRFPE50IRFPE50Vishay/SiliconixMOSFET N-CH 800V 7.8A TO-247AC
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.7A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.8A  ·  Input Capacitance (Ciss) @ Vds: 3100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
from 8,65Additional information
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IRFR9214PBFVishay/SiliconixMOSFET P-CH 250V 2.7A DPAK
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 220pf @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 0,65Additional information
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IRFU010Vishay/SiliconixMOSFET N-CH 50V 8.2A I-PAK
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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SI1499DH-T1-E3SI1499DH-T1-E3Vishay/SiliconixMOSFET P-CH 8V 1.6A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  Input Capacitance (Ciss) @ Vds: 650pF @ 4V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.78W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,34
from 0,77
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SI7454DP-T1-GE3Vishay/SiliconixMOSFET N-CH 100V 5A PPAK 8SOIC
Rds On (Max) @ Id, Vgs: 34 mOhm @ 7.8A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 0,99Additional information
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IRFR120TRLPBFVishay/SiliconixMOSFET N-CH 100V 7.7A DPAK
Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.7A  ·  Input Capacitance (Ciss) @ Vds: 360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 0,62Additional information
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IRF644IRF644Vishay/SiliconixMOSFET N-CH 250V 14A TO-220AB
Rds On (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 3,95Additional information
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SI7322DN-T1-GE3SI7322DN-T1-GE3Vishay/SiliconixMOSFET N-CH 100V 18A 1212-8
Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 52W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
from 0,94
from 2,13
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IRF9530STRLPBFIRF9530STRLPBFVishay/SiliconixMOSFET P-CH 100V 12A D2PAK
Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 860pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,21Additional information
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IRFI624GIRFI624GVishay/SiliconixMOSFET N-CH 250V 3.4A TO220FP
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.4A  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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SIA411DJ-T1-E3SIA411DJ-T1-E3Vishay/SiliconixMOSFET P-CH 20V 12A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 19W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-70-6
from 0,46
from 1,04
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SI1070X-T1-E3SI1070X-T1-E3Vishay/SiliconixMOSFET N-CH 30V 1.2A SOT563F
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 99 mOhm @ 1.2A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 8.3nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.2A  ·  Input Capacitance (Ciss) @ Vds: 385pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 236mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89-6, SOT-563F, SOT-666
from 0,18
from 0,21
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IRFI720GIRFI720GVishay/SiliconixMOSFET N-CH 400V 2.6A TO220FP
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.6A  ·  Input Capacitance (Ciss) @ Vds: 410pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
from 2,57Additional information
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IRFIZ48GIRFIZ48GVishay/SiliconixMOSFET N-CH 60V 37A TO220FP
Rds On (Max) @ Id, Vgs: 18 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
from 3,45
from 7,61
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IRFL9014PBFIRFL9014PBFVishay/SiliconixMOSFET P-CH 60V 1.8A SOT223
Rds On (Max) @ Id, Vgs: 500 mOhm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.8A  ·  Input Capacitance (Ciss) @ Vds: 270pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,91Additional information
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IRLZ14SIRLZ14SVishay/SiliconixMOSFET N-CH 60V 10A D2PAK
Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 8.4nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,36
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