Discrete Semiconductor Products · MOSFETs - Single

IRFBG20 — MOSFET N-CH 1000V 1.4A TO-220AB

Manufacturer	Vishay/Siliconix

Rds On (Max) @ Id, Vgs	11 Ohm @ 840mA, 10V
Drain to Source Voltage (Vdss)	1000V (1kV)
Gate Charge (Qg) @ Vgs	38nC @ 10V
Current - Continuous Drain (Id) @ 25° C	1.4A
Input Capacitance (Ciss) @ Vds	500pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	54W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Found under name	*IRFBG20

Analogous by characteristics

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	SI2333CDS-T1-E3	Vishay/Siliconix	MOSFET P-CH 12V 7.1A SOT23-3 Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.1A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7.1A · Input Capacitance (Ciss) @ Vds: 1225pF @ 6V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	from 0,38 from 0,86	Additional information Find at suppliers
	IRFP354PBF	Vishay/Siliconix	MOSFET N-CH 450V 14A TO-247AC Series: HEXFET® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 450V · Gate Charge (Qg) @ Vgs: 160nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC		Additional information Find at suppliers
	IRFDC20	Vishay/Siliconix	MOSFET N-CH 600V 320MA 4-DIP Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 190mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 320mA · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP	from 2,21	Additional information Find at suppliers
	IRFBE30STRR	Vishay/Siliconix	MOSFET N-CH 800V 4.1A D2PAK Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 78nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.1A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 1,61	Additional information Find at suppliers
	SIA417DJ-T1-GE3	Vishay/Siliconix	MOSFET P-CH 8V 12A SC70-6 Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 32nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1600pF @ 4V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 19W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6	from 0,42 from 0,95	Additional information Find at suppliers
	SI7898DP-T1-E3	Vishay/Siliconix	MOSFET N-CH 150V 3A PPAK 8SOIC Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8	from 0,71 from 0,77	Additional information Find at suppliers
	SI3433BDV-T1-E3	Vishay/Siliconix	MOSFET P-CH 20V 4.3A 6-TSOP Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP	from 0,29 from 0,34	Additional information Find at suppliers
	IRFR9214TRR	Vishay/Siliconix	MOSFET P-CH 250V 2.7A DPAK Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 220pf @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,65	Additional information Find at suppliers
	IRFPF30	Vishay/Siliconix	MOSFET N-CH 900V 3.6A TO-247AC Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 78nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	from 5,85	Additional information Find at suppliers
	SI1411DH-T1-E3	Vishay/Siliconix	MOSFET P-CH 150V 420MA SC70-6 Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 6.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 420mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363	from 0,28 from 0,32	Additional information Find at suppliers
	IRF630L	Vishay/Siliconix	MOSFET N-CH 200V 9A TO-262 Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	from 0,70	Additional information Find at suppliers
	SI5406DC-T1-E3	Vishay/Siliconix	MOSFET N-CH 12V 6.9A 1206-8 Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™	from 0,68 from 1,55	Additional information Find at suppliers
	IRFZ24STRR	Vishay/Siliconix	MOSFET N-CH 60V 17A D2PAK Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 0,78	Additional information Find at suppliers
	SIE832DF-T1-E3	Vishay/Siliconix	MOSFET N-CH 40V 50A 10-POLARPAK Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 77nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3800pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (S)	from 1,71 from 3,99	Additional information Find at suppliers
	IRFPC50	Vishay/Siliconix	MOSFET N-CH 600V 11A TO-247AC Rds On (Max) @ Id, Vgs: 600 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 140nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 180W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC	from 7,37	Additional information Find at suppliers
	IRF121	Vishay/Siliconix	MOSFET N-CH 60V 8A TO-204AA Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 8A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Chassis Mount · Package / Case: TO-204, TO-3		Additional information Find at suppliers
	IRL530S	Vishay/Siliconix	MOSFET N-CH 100V 15A D2PAK Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 28nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 930pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 1,46	Additional information Find at suppliers
	SI7110DN-T1-GE3	Vishay/Siliconix	MOSFET N-CH 20V 13.5A 1212-8 Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 21.1A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 21nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8	from 0,76 from 0,82	Additional information Find at suppliers
	IRL630S	Vishay/Siliconix	MOSFET N-CH 200V 9A D2PAK Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 2,73	Additional information Find at suppliers
	BS250KL-TR1-E3	Vishay/Siliconix	MOSFET P-CH 60V 270MA TO92-18RM Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 3nC @ 15V · Current - Continuous Drain (Id) @ 25° C: 270mA · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 800mW · Mounting Type: Through Hole · Package / Case: TO-18-3, TO-92-18RM	from 0,17 from 0,20	Additional information Find at suppliers
	IRFI9Z24GPBF	Vishay/Siliconix	MOSFET P-CH 60V 8.5A TO220FP Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.5A · Input Capacitance (Ciss) @ Vds: 570pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 37W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB	from 1,07 from 2,75	Additional information Find at suppliers
	SI7434DP-T1-GE3	Vishay/Siliconix	MOSFET N-CH 250V 2.3A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 155 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.3A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8	from 1,34 from 1,43	Additional information Find at suppliers
	IRF730S	Vishay/Siliconix	MOSFET N-CH 400V 5.5A D2PAK Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 2,47	Additional information Find at suppliers
	IRF9Z34STRR	Vishay/Siliconix	MOSFET P-CH 60V 18A D2PAK Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 3,36	Additional information Find at suppliers
	SI3460BDV-T1-E3	Vishay/Siliconix	MOSFET N-CH 20V 8A 6-TSOP Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 24nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 860pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.5W · Mounting Type: Surface Mount · Package / Case: 6-TSOP	from 0,46 from 1,04	Additional information Find at suppliers

Catalog with parameters for 1,401,534 components