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Discrete Semiconductor Products  ·  MOSFETs - Single

 
IRF740

IRF740 — MOSFET N-CH 400V 10A TO-220

ManufacturerSTMicroelectronics
Harmful substancesRoHS   Lead-free
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C10A
FET PolarityN-Channel
FET FeatureStandard
Power - Max125W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Found under name497-2931-5
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Series: STripFET™  ·  Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 5800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 4W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerFlat™ (6 x 5)
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Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 43.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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STD12NM50NDSTMicroelectronicsMOSFET N-CH 500V 11A DPAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STW14NM50FDSTW14NM50FDSTMicroelectronicsMOSFET N-CH 500V 14A TO-247
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STI25NM60NDSTMicroelectronicsMOSFET N-CH 600V 21A I2PAK
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STF11NM60NDSTMicroelectronicsMOSFET N-CH 600V 10A TO-220FP
Series: FDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
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