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Discrete Semiconductor Products  ·  MOSFETs - Single
 
IRF1010N

IRF1010N — MOSFET N-CH 55V 85A TO-220AB

ManufacturerInternational Rectifier
SeriesHEXFET®
Rds On (Max) @ Id, Vgs11 mOhm @ 43A, 10V
Drain to Source Voltage (Vdss)55V
Gate Charge (Qg) @ Vgs120nC @ 10V
Current - Continuous Drain (Id) @ 25° C85A
Input Capacitance (Ciss) @ Vds3210pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max180W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
Found under name*IRF1010N
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IRLR2905TRPBFIRLR2905TRPBFInternational RectifierMOSFET N-CH 55V 42A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 110W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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