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Discrete Semiconductor Products  ·  MOSFETs - Single

 

FQI2N80TU — MOSFET N-CH 800V 2.4A I2PAK

ManufacturerFairchild Semiconductor
Harmful substancesRoHS   Lead-free
SeriesQFET™
Rds On (Max) @ Id, Vgs6.3 Ohm @ 900mA, 10V
Drain to Source Voltage (Vdss)800V
Gate Charge (Qg) @ Vgs15nC @ 10V
Current - Continuous Drain (Id) @ 25° C2.4A
Input Capacitance (Ciss) @ Vds550pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max3.13W
Mounting TypeThrough Hole
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
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Series: QFET™  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 98W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Series: QFET™  ·  Rds On (Max) @ Id, Vgs: 82 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 2220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.13W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Series: QFET™  ·  Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 7500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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