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Discrete Semiconductor Products  ·  MOSFETs - Single

 

FDR838P — MOSFET P-CH 20V 8A SSOT-8

ПроизводительFairchild Semiconductor
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs17 mOhm @ 8A, 4.5V
Drain to Source Voltage (Vdss)20V
Gate Charge (Qg) @ Vgs45nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C8A
Input Capacitance (Ciss) @ Vds3300pF @ 10V
FET PolarityP-Channel
FET FeatureLogic Level Gate
Power - Max900mW
Mounting TypeSurface Mount
Package / Case8-SSOT, SuperSOT-8
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ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
FDB5645Fairchild SemiconductorMOSFET N-CH 60V 80A TO-263AB
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 40A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 107nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 4468pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FDB5690FDB5690Fairchild SemiconductorMOSFET N-CH 60V 32A TO-263AB
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 27 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 1120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 58W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
от 0,70
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FQD11P06TMFQD11P06TMFairchild SemiconductorMOSFET P-CH 60V 9.4A DPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 185 mOhm @ 4.7A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.4A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
от 0,27Доп. информация
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FQD5P20TMFQD5P20TMFairchild SemiconductorMOSFET P-CH 200V 3.7A DPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.7A  ·  Input Capacitance (Ciss) @ Vds: 430pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NDS351NNDS351NFairchild SemiconductorMOSFET N-CH 30V 1.1A SOT-23
Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 3.5nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.1A  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 460mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 3-SSOT, SuperSOT-3
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Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 55 mOhm @ 7.85A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 15.7A  ·  Input Capacitance (Ciss) @ Vds: 630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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FQE10N20CTUFairchild SemiconductorMOSFET N-CH 200V 4A TO-126
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 360 mOhm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 12.8W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-126-3 (Straight Leads)
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FDP3652FDP3652Fairchild SemiconductorMOSFET N-CH 100V 61A TO-220AB
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 61A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 53nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 61A  ·  Input Capacitance (Ciss) @ Vds: 2880pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
от 0,93
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FDS6298FDS6298Fairchild SemiconductorMOSFET N-CH 30V 13A 8-SOIC
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 1108pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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FQU7P06TUFairchild SemiconductorMOSFET P-CH 60V 5.4A IPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 451 mOhm @ 2.7A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 8.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.4A  ·  Input Capacitance (Ciss) @ Vds: 295pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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2N7002K2N7002KFairchild SemiconductorMOSFET N-CH 60V 115MA SOT23
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 115mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Серия: UltraFET™  ·  Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2745pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 155W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
от 0,88Доп. информация
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FCB11N60FTMFCB11N60FTMFairchild SemiconductorMOSFET N-CH 600V 11A D2PAK
Серия: SuperFET™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1490pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FQB34P10TM_F085FQB34P10TM_F085Fairchild SemiconductorMOSFET P-CH 100V 33.5A D2PAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 16.75A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33.5A  ·  Input Capacitance (Ciss) @ Vds: 2910pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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FDM3622FDM3622Fairchild SemiconductorMOSFET N-CH 100V 4.4A POWER33
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.4A  ·  Input Capacitance (Ciss) @ Vds: 1090pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 900mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-MLP, Power33
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FQPF3P50FQPF3P50Fairchild SemiconductorMOSFET P-CH 500V 1.9A TO-220F
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 950mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.9A  ·  Input Capacitance (Ciss) @ Vds: 660pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 39W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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FDP8870_F085Fairchild SemiconductorMOSFET N-CH 30V 156A TO-220
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 132nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 156A  ·  Input Capacitance (Ciss) @ Vds: 5200pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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FQP5N50CFQP5N50CFairchild SemiconductorMOSFET N-CH 500V 5A TO-220
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 625pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 73W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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FQU2N80TUFairchild SemiconductorMOSFET N-CH 800V 1.8A IPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 6.3 Ohm @ 900mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.8A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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FDB8445FDB8445Fairchild SemiconductorMOSFET N-CH 40V 70A D2PAK
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 62nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 3805pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 92W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
от 0,59
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FQAF7N90Fairchild SemiconductorMOSFET N-CH 900V 5.2A TO-3PF
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 59nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.2A  ·  Input Capacitance (Ciss) @ Vds: 2280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 107W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3PF-3
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FDS4685FDS4685Fairchild SemiconductorMOSFET P-CH 40V 8.2A 8SOIC
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 27 mOhm @ 8.2A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 1872pF @ 20V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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FQU4N50TU_WSFairchild SemiconductorMOSFET N-CH 500V 2.6A IPAK
Серия: QFET™  ·  Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.3A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.6A  ·  Input Capacitance (Ciss) @ Vds: 460pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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FDAF59N30FDAF59N30Fairchild SemiconductorMOSFET N-CH 300V 34A TO-3PF
Серия: UniFET™  ·  Rds On (Max) @ Id, Vgs: 56 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 4670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 161W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3PF-3
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FDB5800FDB5800Fairchild SemiconductorMOSFET N-CH 60V 80A D2PAK
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 6 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 135nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 6625pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 242W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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