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Discrete Semiconductor Products  ·  MOSFETs - Single
 
BSP030,115

BSP030,115 — MOSFET N-CH 30V 10A SOT223

ManufacturerNXP Semiconductors
Harmful substancesRoHS   Lead-free
SeriesTrenchMOS™
Rds On (Max) @ Id, Vgs30 mOhm @ 5A, 10V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs40nC @ 10V
Current - Continuous Drain (Id) @ 25° C10A
Input Capacitance (Ciss) @ Vds770pF @ 24V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max8.3W
Mounting TypeSurface Mount
Package / CaseSOT-223 (3 leads + Tab), SC-73, TO-261AA
Found under nameBSP030 T/R, BSP030 T/R-ND
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 156nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 8250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 72 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 1704pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 98W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3960pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 2852pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 16.7nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 1620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 136W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 1020pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 59W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4307pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17.5A  ·  Input Capacitance (Ciss) @ Vds: 2170pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-HVSON
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 127nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 272W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (4 leads + tab)
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 5V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 52A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 116W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6808pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6808pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4.95 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 26.7nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 115W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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PHP174NQ04LT,127PHP174NQ04LT,127NXP SemiconductorsMOSFET N-CH 40V 75A SOT78
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5345pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK7515-100A,127BUK7515-100A,127NXP SemiconductorsMOSFET N-CH 100V 75A SOT78
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK7214-75B,118BUK7214-75B,118NXP SemiconductorsMOSFET N-CH 75V 70A DPAK
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 2612pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 167W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2470pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BUK7511-55A,127BUK7511-55A,127NXP SemiconductorsMOSFET N-CH 55V 75A SOT78
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3093pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 166W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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