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BSH111,215

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BSH111,215 — MOSFET N-CH 55V 335MA SOT-23

ManufacturerNXP Semiconductors
Harmful substancesRoHS   Lead-free
SeriesTrenchMOS™
Rds On (Max) @ Id, Vgs4 Ohm @ 500mA, 4.5V
Drain to Source Voltage (Vdss)55V
Gate Charge (Qg) @ Vgs1nC @ 8V
Current - Continuous Drain (Id) @ 25° C335mA
Input Capacitance (Ciss) @ Vds40pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max830mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Found under name568-1657-1
Analogous by characteristics
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2427pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 157W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 110V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 633pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 79W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 21.7A  ·  Input Capacitance (Ciss) @ Vds: 1210pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 89W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BUK7506-55B,127BUK7506-55B,127NXP SemiconductorsMOSFET N-CH 55V 75A TO220AB
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 254W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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PH7030L,115PH7030L,115NXP SemiconductorsMOSFET N-CH 30V 68A LFPAK
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 68A  ·  Input Capacitance (Ciss) @ Vds: 1362pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 91nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 7446pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 1074pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 93W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK7514-55A,127BUK7514-55A,127NXP SemiconductorsMOSFET N-CH 55V 73A SOT78
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 73A  ·  Input Capacitance (Ciss) @ Vds: 2464pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 166W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK98150-55A,135BUK98150-55A,135NXP SemiconductorsMOSFET N-CH 55V 5.5A SOT-223
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 137 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 5.3nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BUK7511-55B,127BUK7511-55B,127NXP SemiconductorsMOSFET N-CH 55V 75A TO220AB
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2604pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 157W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 91nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6212pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 21 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 65W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.7A  ·  Input Capacitance (Ciss) @ Vds: 959pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 88W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK7535-100A,127BUK7535-100A,127NXP SemiconductorsMOSFET N-CH 100V 41A SOT78
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 41A  ·  Input Capacitance (Ciss) @ Vds: 2535pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 149W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK9Y30-75B,115BUK9Y30-75B,115NXP SemiconductorsMOSFET N-CH 75V 34A LFPAK
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 28 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 2070pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 85W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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PSMN015-100P,127PSMN015-100P,127NXP SemiconductorsMOSFET N-CH 100V 75A TO220AB
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 90nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 165nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 8250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BST72A,112BST72A,112NXP SemiconductorsMOSFET N-CH 100V 190MA SOT54
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 190mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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BUK9640-100A,118BUK9640-100A,118NXP SemiconductorsMOSFET N-CH 100V 39A D2PAK
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 39 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 39A  ·  Input Capacitance (Ciss) @ Vds: 3072pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 158W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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PHD71NQ03LT,118PHD71NQ03LT,118NXP SemiconductorsMOSFET N-CH 30V 75A SOT428
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13.2nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 1220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 120W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BUK7907-40ATC,127NXP SemiconductorsMOSFET N-CH 40V 75A TO220AB
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 108nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 272W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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PHU11NQ10T,127PHU11NQ10T,127NXP SemiconductorsMOSFET N-CH 100V 10.9A SOT533
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 14.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10.9A  ·  Input Capacitance (Ciss) @ Vds: 360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 57.7W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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PHD22NQ20T,118PHD22NQ20T,118NXP SemiconductorsMOSFET N-CH 200V 21.1A SOT428
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 120 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 30.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21.1A  ·  Input Capacitance (Ciss) @ Vds: 1380pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BUK7606-55B,118BUK7606-55B,118NXP SemiconductorsMOSFET N-CH 55V 75A D2PAK
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 254W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BUK9E06-55B,127BUK9E06-55B,127NXP SemiconductorsMOSFET N-CH 55V 75A I2PAK
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 7565pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 258W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
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