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Discrete Semiconductor Products  ·  MOSFETs - Single

 

APTM100DA18T1G — MOSFET N-CH 1000V 40A SP1

ManufacturerMicrosemi-PPG
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs216 mOhm @ 33A, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Gate Charge (Qg) @ Vgs570nC @ 10V
Current - Continuous Drain (Id) @ 25° C40A
Input Capacitance (Ciss) @ Vds14800pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max657W
Mounting TypeChassis Mount
Package / CaseSP1 Module
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APT50M60L2VRGMicrosemi-PPGMOSFET N-CH 500V 77A TO-264MAX
Series: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 38.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 560nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 77A  ·  Input Capacitance (Ciss) @ Vds: 10600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 833W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT50M65LFLLGMicrosemi-PPGMOSFET N-CH 500V 67A TO-264
Series: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 65 mOhm @ 33.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 141nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 67A  ·  Input Capacitance (Ciss) @ Vds: 7010pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APTM100U13SGMicrosemi-PPGMOSFET N-CH 1000V 65A J3
Rds On (Max) @ Id, Vgs: 145 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 2000nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 31600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1250W  ·  Mounting Type: Chassis Mount  ·  Package / Case: J3 Module
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APT20M18B2VFRGMicrosemi-PPGMOSFET N-CH 200V 100A T-MAX
Series: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 18 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 330nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9880pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT8056BVRGMicrosemi-PPGMOSFET N-CH 800V 16A TO-247
Series: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 560 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT6025SFLLGMicrosemi-PPGMOSFET N-CH 600V 24A D3PAK
Series: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 2910pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 325W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT8024LLLGMicrosemi-PPGMOSFET N-CH 800V 31A TO-264
Series: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 15.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 4670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT1201R6BVFRGMicrosemi-PPGMOSFET N-CH 1200V 8A TO-247
Series: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 230nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 3660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT60M60JLLMicrosemi-PPGMOSFET N-CH 600V 70A SOT-227
Series: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 289nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 12630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT34F100LAPT34F100LMicrosemi-PPGMOSFET N-CH 1000V 34A TO-264
Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT50M75LLLGMicrosemi-PPGMOSFET N-CH 500V 57A TO-264
Series: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 28.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 125nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 57A  ·  Input Capacitance (Ciss) @ Vds: 5590pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 570W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT50M85B2VFRGMicrosemi-PPGMOSFET N-CH 500V 56A T-MAX
Series: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 28A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 420nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 56A  ·  Input Capacitance (Ciss) @ Vds: 10500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10M11B2VFRGMicrosemi-PPGMOSFET N-CH 100V 100A T-MAX
Series: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 450nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 10300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APTM50DAM38TGMicrosemi-PPGMOSFET N-CH 500V 90A SP4
Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 246nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 11200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP4 Module
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APTM100UM65SAGAPTM100UM65SAGMicrosemi-PPGMOSFET N-CH 1000V 145A SP6
Rds On (Max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 1068nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 145A  ·  Input Capacitance (Ciss) @ Vds: 28500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3250W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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APT10M09LVFRGMicrosemi-PPGMOSFET N-CH 100V 100A TO-264
Series: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 350nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9875pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT47N60BCFGMicrosemi-PPGMOSFET N-CH 600V 46A TO-247
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 83 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 255nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 46A  ·  Input Capacitance (Ciss) @ Vds: 7290pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 417W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT34F60BGMicrosemi-PPGMOSFET N-CH 600V 34A TO-247
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 165nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 6640pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 624W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT1001RBVRGMicrosemi-PPGMOSFET N-CH 1000V 11A TO-247
Series: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 3660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20N60BC3GMicrosemi-PPGMOSFET N-CH 600V 20.7A TO-247
Series: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 114nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20.7A  ·  Input Capacitance (Ciss) @ Vds: 2440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 208W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20M36BFLLGMicrosemi-PPGMOSFET N-CH 200V 65A TO-247
Series: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 36 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 3080pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 329W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT50M75JLLMicrosemi-PPGMOSFET N-CH 500V 51A SOT-227
Series: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 25.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 125nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 51A  ·  Input Capacitance (Ciss) @ Vds: 5590pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10086BVRGMicrosemi-PPGMOSFET N-CH 1000V 13A TO-247
Series: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 860 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
from 20,33Additional information
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APT13F120BAPT13F120BMicrosemi-PPGMOSFET N-CH 1200V 13A TO-247
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 145nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 4765pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT8014JLLMicrosemi-PPGMOSFET N-CH 800V 42A SOT-227
Series: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 21A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 285nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 7238pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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