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Discrete Semiconductor Products  ·  MOSFETs - Single

 
APT29F100L

- Dimensional Drawing

APT29F100L — MOSFET N-CH 1000V 29A TO-264

ManufacturerMicrosemi-PPG
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs460 mOhm @ 16A, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Gate Charge (Qg) @ Vgs260nC @ 10V
Current - Continuous Drain (Id) @ 25° C29A
Input Capacitance (Ciss) @ Vds8500pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max1040W
Mounting TypeThrough Hole
Package / CaseTO-264
Found under nameAPT29F100L-ND, APT29F100LMI
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APT31M100LAPT31M100LMicrosemi-PPGMOSFET N-CH 1000V 31A TO-264
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 8500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10040B2VRGMicrosemi-PPGMOSFET N-CH 1000V 25A T-MAX
Series: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 630nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 9400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M34BLLGMicrosemi-PPGMOSFET N-CH 200V 74A TO-247
Series: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 74A  ·  Input Capacitance (Ciss) @ Vds: 3660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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Rds On (Max) @ Id, Vgs: 125 mOhm @ 24.5A, 12V  ·  Drain to Source Voltage (Vdss): 600V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 730W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT60M60JFLLMicrosemi-PPGMOSFET N-CH 600V 70A SOT-227
Series: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 289nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 12630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8030JVFRMicrosemi-PPGMOSFET N-CH 800V 25A SOT-227
Series: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 510nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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