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Discrete Semiconductor Products  ·  MOSFETs - Single
 

APT23F60B — MOSFET N-CH 600V 23A TO-247

ManufacturerMicrosemi-PPG
Harmful substancesRoHS   Lead-free
SeriesPOWER MOS 8™
Rds On (Max) @ Id, Vgs310 mOhm @ 11A, 10V
Drain to Source Voltage (Vdss)600V
Gate Charge (Qg) @ Vgs110nC @ 10V
Current - Continuous Drain (Id) @ 25° C23A
Input Capacitance (Ciss) @ Vds4415pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max415W
Mounting TypeThrough Hole
Package / CaseTO-247
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
APT34F100B2Microsemi-PPGMOSFET N-CH 1000V 34A T-MAX
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT24M80BMicrosemi-PPGMOSFET N-CH 800V 24A TO-247
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 430 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 4595pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
from 12,72Additional information
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APT30M60JMicrosemi-PPGMOSFET N-CH 600V 30A SOT-227
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 21A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 215nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 5890pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 356W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
from 30,64Additional information
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APT9M100BMicrosemi-PPGMOSFET N-CH 1000V 9A TO-247
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 2605pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 335W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
from 6,46Additional information
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APT24M120LMicrosemi-PPGMOSFET N-CH 1200V 24A TO-264
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 680 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 8370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT75M50LMicrosemi-PPGMOSFET N-CH 500V 75A TO-264
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 37A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 290nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 11600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
from 17,98Additional information
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APT21M100JMicrosemi-PPGMOSFET N-CH 1000V 21A SOT-227
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 8500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 462W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
from 36,78Additional information
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APT29F100B2Microsemi-PPGMOSFET N-CH 1000V 29A T-MAX
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 460 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 29A  ·  Input Capacitance (Ciss) @ Vds: 8500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT44F80B2Microsemi-PPGMOSFET N-CH 800V 44A T-MAX
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 24A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 9330pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
from 21,38Additional information
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APT66M60LMicrosemi-PPGMOSFET N-CH 600V 66A TO-264
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 330nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 66A  ·  Input Capacitance (Ciss) @ Vds: 13190pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT48M80B2Microsemi-PPGMOSFET N-CH 800V 48A T-MAX
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 24A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 48A  ·  Input Capacitance (Ciss) @ Vds: 9330pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
from 20,37Additional information
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APT43M60B2Microsemi-PPGMOSFET N-CH 600V 43A T-MAX
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 21A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 215nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 43A  ·  Input Capacitance (Ciss) @ Vds: 5890pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 780W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
from 15,24Additional information
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APT34F60BGMicrosemi-PPGMOSFET N-CH 600V 34A TO-247
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 165nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 6640pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 624W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT22F100JMicrosemi-PPGMOSFET N-CH 1000V 22A SOT-227
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 545W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT19M120JMicrosemi-PPGMOSFET N-CH 1200V 19A SOT-227
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 560 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 9670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 545W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT24M120B2Microsemi-PPGMOSFET N-CH 1200V 24A T-MAX
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 680 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 8370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT22F120LMicrosemi-PPGMOSFET N-CH 1200V 22A TO-264
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 800 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 8370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT34M60BMicrosemi-PPGMOSFET N-CH 600V 34A TO-247
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 165nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 6640pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 624W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT38F80LMicrosemi-PPGMOSFET N-CH 800V 41A TO-264
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 280 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 41A  ·  Input Capacitance (Ciss) @ Vds: 8070pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT28M120LMicrosemi-PPGMOSFET N-CH 1200V 28A TO-264
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 560 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 9670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT39M60JMicrosemi-PPGMOSFET N-CH 600V 39A SOT-227
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 28A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 280nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 39A  ·  Input Capacitance (Ciss) @ Vds: 11300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 480W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT58M50JMicrosemi-PPGMOSFET N-CH 500V 58A SOT-227
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 340nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 13500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 540W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT30F50BAPT30F50BMicrosemi-PPGMOSFET N-CH 500V 30A TO-247
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 4525pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 415W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT25M100JMicrosemi-PPGMOSFET N-CH 1000V 25A SOT-227
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 545W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT53F80JMicrosemi-PPGMOSFET N-CH 800V 53A SOT-227
Series: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 43A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 570nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 53A  ·  Input Capacitance (Ciss) @ Vds: 17550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 960W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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