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APL1001J

- Dimensional Drawing

APL1001J — MOSFET N-CH 1000V 18A SOT-227

ManufacturerMicrosemi-PPG
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs600 mOhm @ 500mA, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C18A
Input Capacitance (Ciss) @ Vds7200pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max520W
Mounting TypeChassis Mount
Package / CaseSOT-227
Found under nameAPL1001J-ND, APL1001JMI
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APT5010JVRU3APT5010JVRU3Microsemi-PPGMOSFET N-CH 500V 44A SOT227
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Rds On (Max) @ Id, Vgs: 650 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 9670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APTM120U10SAGAPTM120U10SAGMicrosemi-PPGMOSFET N-CH 1200V 116A SP6
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APT66M60LMicrosemi-PPGMOSFET N-CH 600V 66A TO-264
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