Дискретные полупроводники · MOSFET транзисторы (одиночные)

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Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	2SK2614	Toshiba	MOSFET N-CH 50V 20A 2-7B1B Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 900pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-7B1B		Additional information Find at suppliers Buy in store
	2SK2614(Q)	Toshiba	MOSFET N-CH 50V 20A 2-7B1B Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 900pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-7B1B		Additional information Find at suppliers Buy in store
	2SK2614(TE16L1,Q)	Toshiba	MOSFET N-CH 50V 20A SC-64 Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 900pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Surface Mount	from 0,00	Additional information Find at suppliers Buy in store
	2SK2615(TE12L)	Toshiba	MOSFET N-CH 60V 2A PW-MINI Rds On (Max) @ Id, Vgs: 300 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 150pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI		Additional information Find at suppliers Buy in store
	2SK2615(TE12L,F)	Toshiba	MOSFET N-CH 60V 2A PW-MINI Rds On (Max) @ Id, Vgs: 300 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 150pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI	from 0,00	Additional information Find at suppliers Buy in store
	2SK2624ALS	SANYO Semiconductor (U.S.A) Co	MOSFET N-CH 600V 3.5A TO-220FI Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.8A, 15V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.5A · Input Capacitance (Ciss) @ Vds: 550pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Through Hole	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2625ALS	SANYO Semiconductor (U.S.A) Co	MOSFET N-CH 600V 5A TO-220FI Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.5A, 15V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 700pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Through Hole	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2632LS	SANYO Semiconductor (U.S.A) Co	MOSFET N-CH 800V 2.5A TO-220FI Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.3A, 15V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.5A · Input Capacitance (Ciss) @ Vds: 550pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Through Hole	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2698(F,T)	Toshiba	MOSFET N-CH 500V 15A 2-16C1B Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 2600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2698(T)	Toshiba	MOSFET N-CH 500V 15A 2-16C1B Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 2600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2699	Toshiba	MOSFET N-CH 600V 12A 2-16C1B Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2699(F,T)	Toshiba	MOSFET N-CH 600V 12A 2-16C1B Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2700(T)	Toshiba	MOSFET N-CH 900V 3A 2-10R1B Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10R1B		Additional information Find at suppliers Buy in store
	2SK2713	Rohm Semiconductor	MOSFET N-CH 450V 5A TO-220FN Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 450V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220FN-3 (Straight Leads)	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2715TL	Rohm Semiconductor	MOSFET N-CH 500V 2A DPAK Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 500V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 280pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2719	Toshiba	MOSFET N-CH 900V 3A 2-16C1B Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2719(F)	Toshiba	MOSFET N-CH 900V 3A 2-16C1B Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2731T146	Rohm Semiconductor	MOSFET N-CH 30V 200MA SOT-346 Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 100mA, 10V · Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 25pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200mW · Mounting Type: Surface Mount · Package / Case: SC-59-3, SMT3, SOT-346, TO-236	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2740	Rohm Semiconductor	MOSFET N-CH 600V 7A TO-220FN Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 600V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1050pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220FN-3 (Straight Leads)	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2744	Toshiba	MOSFET N-CH 50V 45A 2-16C1B Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 2300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2744(F)	Toshiba	MOSFET N-CH 50V 45A TO-3PN Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 2300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2745	Toshiba	MOSFET N-CH 50V 50A 2-16C1B Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 4000pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2745(F)	Toshiba	MOSFET N-CH 50V 50A 2-16C1B Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 4000pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2746	Toshiba	MOSFET N-CH 800V 7A 2-16C1B Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2746(F,T)	Toshiba	MOSFET N-CH 800V 7A 2-16C1B Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store

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