Дискретные полупроводники · MOSFET транзисторы (одиночные)

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Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	2SK2504TL	Rohm Semiconductor	MOSFET N-CH 100V 5A DPAK Rds On (Max) @ Id, Vgs: 220 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 520pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2507(F)	Toshiba	MOSFET N-CH 50V 25A SC-67 Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 900pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: 2-10R1B	from 0,00	Additional information Find at suppliers Buy in store
	2SK2508(F,T)	Toshiba	MOSFET N-CH 250V 13A SC-67 Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.5A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10R1B	from 0,00	Additional information Find at suppliers Buy in store
	2SK2542	Toshiba	MOSFET N-CH 500V 8A TO-220AB Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: TO-220AB		Additional information Find at suppliers Buy in store
	2SK2542(F)	Toshiba	MOSFET N-CH 500V 8A TO-220AB Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2544(F)	Toshiba	MOSFET N-CH 600V 6A TO-220AB Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,00	Additional information Find at suppliers Buy in store
	2SK2549(TE12L)	Toshiba	MOSFET N-CH 16V 2A PW-MINI Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4V · Drain to Source Voltage (Vdss): 16V · Gate Charge (Qg) @ Vgs: 5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 260pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI		Additional information Find at suppliers Buy in store
	2SK2549(TE12L,F)	Toshiba	MOSFET N-CH 16V 2A PW-MINI Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4V · Drain to Source Voltage (Vdss): 16V · Gate Charge (Qg) @ Vgs: 5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 260pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2550	Toshiba	MOSFET N-CH 50V 45A 2-16C1B Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 36nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1250pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2551	Toshiba	MOSFET N-CH 50V 50A 2-16C1B Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 4000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2598(TE24L)	Toshiba	MOSFET N-CH 250V 13A TO-220FL Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.5A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220FL		Additional information Find at suppliers Buy in store
	2SK2601	Toshiba	MOSFET N-CH 500V 10A 2-16C1B Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1200pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2601(F)	Toshiba	MOSFET N-CH 500V 10A 2-16C1B Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1200pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2602	Toshiba	MOSFET N-CH 600V 6A 2-16C1B Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2602(F,T)	Toshiba	MOSFET N-CH 600V 6A 2-16C1B Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2603(F)	Toshiba	MOSFET N-CH 800V 3A TO-220AB Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,00	Additional information Find at suppliers Buy in store
	2SK2604(T)	Toshiba	MOSFET N-CH 800V 5A 2-16C1B Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1080pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2606	Toshiba	MOSFET N-CH 800V 8A 2-16F1B Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 85W · Mounting Type: Through Hole · Package / Case: 2-16F1B		Additional information Find at suppliers Buy in store
	2SK2606(F)	Toshiba	MOSFET N-CH 800V 8A 2-16F1B Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 85W · Mounting Type: Through Hole · Package / Case: 2-16F1B	from 0,00	Additional information Find at suppliers Buy in store
	2SK2607	Toshiba	MOSFET N-CH 800V 9A 2-16C1B Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2607(F,T)	Toshiba	MOSFET N-CH 800V 9A 2-16C1B Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2610	Toshiba	MOSFET N-CH 900V 5A 2-16C1B Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2610(F,T)	Toshiba	MOSFET N-CH 900V 5A 2-16C1B Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2613	Toshiba	MOSFET N-CH 1KV 8A 2-16C1B Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2613(F)	Toshiba	MOSFET N-CH 1KV 8A 2-16C1B Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store

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