Дискретные полупроводники · MOSFET транзисторы (одиночные)

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Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	2SK2095N	Rohm Semiconductor	MOSFET N-CH 60V 10A TO-220FN Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220FN-3 (Straight Leads)	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2103T100	Rohm Semiconductor	MOSFET N-CH 30V 2A SOT-89 Rds On (Max) @ Id, Vgs: 400 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 230pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SC-62, SOT-89, MPT3 (3 leads + Tab)	from 0,00	Additional information Find at suppliers Buy in store
	2SK214	Renesas Technology America	MOSFET N-CH 160V 500MA TO-220AB Drain to Source Voltage (Vdss): 160V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 90pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220AB		Additional information Find at suppliers Buy in store
	2SK214-E	Renesas Technology America	MOSFET N-CH 160V 0.5A TO-220AB Drain to Source Voltage (Vdss): 160V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 90pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,00	Additional information Find at suppliers Buy in store
	2SK2173	Toshiba	MOSFET N-CH 60V 50A 2-16C1B Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3550pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2173(F)	Toshiba	MOSFET N-CH 60V 50A 2-16C1B Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3550pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2201(TE16L1,NQ)	Toshiba	MOSFET N-CH 100V 3A 2-7B2B Rds On (Max) @ Id, Vgs: 350 mOhm @ 2A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 13.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 280pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B	from 0,00	Additional information Find at suppliers Buy in store
	2SK2201(TE16R)	Toshiba	MOSFET N-CH 100V 3A 2-7B2B Rds On (Max) @ Id, Vgs: 350 mOhm @ 2A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 13.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 280pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B		Additional information Find at suppliers Buy in store
	2SK221100L	Panasonic - SSG	MOSFET N-CH 30V 1A MINI-PWR Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 1A · Input Capacitance (Ciss) @ Vds: 87pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: Mini 3P	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2221-E	Renesas Technology America	MOSFET N-CH 200V 8A TO-3P Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-3P	from 0,00	Additional information Find at suppliers Buy in store
	2SK2231	Toshiba	MOSFET N-CH 60V 5A 2-7B1B Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 370pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Through Hole · Package / Case: 2-7B1B	from 0,00	Additional information Find at suppliers Buy in store
	2SK2231(Q)	Toshiba	MOSFET N-CH 60V 5A 2-7B1B Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 370pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Through Hole · Package / Case: 2-7B1B	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2231(TE16L1,NQ)	Toshiba	MOSFET N-CH 60V 5A 2-7J1B Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 370pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B	from 0,00	Additional information Find at suppliers Buy in store
	2SK2231(TE16R)	Toshiba	MOSFET N-CH 60V 5A 2-7J1B Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 370pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B		Additional information Find at suppliers Buy in store
	2SK2231(TE16R1,NQ)	Toshiba	MOSFET N-CH 60V 5A 2-7J1B Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 370pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2232(F,T)	Toshiba	MOSFET N-CH 60V 25A 2-10R1B Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 1000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: 2-10R1B	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2232(T)	Toshiba	MOSFET N-CH 60V 25A 2-10R1B Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 1000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: 2-10R1B		Additional information Find at suppliers Buy in store
	2SK2233	Toshiba	MOSFET N-CH 60V 45A 2-16C1B Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Additional information Find at suppliers Buy in store
	2SK2233(F)	Toshiba	MOSFET N-CH 60V 45A 2-16C1B Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2266(TE24R)	Toshiba	MOSFET N-CH 60V 45A TO-220FL Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: TO-220FL		Additional information Find at suppliers Buy in store
	2SK2266(TE24R,Q)	Toshiba	MOSFET N-CH 60V 45A 2-10S2B Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Surface Mount · Package / Case: 2-10S2B	from 0,00	Additional information Find at suppliers Buy in store
	2SK2267	Toshiba	MOSFET N-CH 60V 60A TO-3P(L) Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 5400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B)		Additional information Find at suppliers Buy in store
	2SK2267(Q)	Toshiba	MOSFET N-CH 60V 60A TO-3P(L) Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 5400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B)	from 0,00	Additional information Find at suppliers Buy in store
	2SK2299N	Rohm Semiconductor	MOSFET N-CH 450V 7A TO-220FN Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 450V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 870pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220FN-3 (Straight Leads)	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SK2311(TE24L,Q)	Toshiba	MOSFET N-CH 60V 25A 2-10S2B Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 1000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Surface Mount · Package / Case: 2-10S2B	from 0,00	Additional information Find at suppliers Buy in store

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