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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
2SK0601G0L2SK0601G0LPanasonic - SSGMOSFET N-CH 80V .5A MINIP-3
Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 45pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: Mini 3P
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2SK0615Panasonic - SSGMOSFET N-CH 80V 500MA 3-SIP
Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 45pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: M-Type
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2SK066400L2SK066400LPanasonic - SSGMOSFET N-CH 50V 100MA SMINI-3
Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V  ·  Drain to Source Voltage (Vdss): 50V  ·  Current - Continuous Drain (Id) @ 25° C: 100mA  ·  Input Capacitance (Ciss) @ Vds: 15pF @ 5V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 3P
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2SK0664G0L2SK0664G0LPanasonic - SSGMOSFET N-CH 50V 100MA SMINI-3
Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V  ·  Drain to Source Voltage (Vdss): 50V  ·  Current - Continuous Drain (Id) @ 25° C: 100mA  ·  Input Capacitance (Ciss) @ Vds: 15pF @ 5V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 3P
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2SK066500L2SK066500LPanasonic - SSGMOSFET N-CH 20V 100MA SMINI-3
Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Current - Continuous Drain (Id) @ 25° C: 100mA  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 3P
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2SK0665G0L2SK0665G0LPanasonic - SSGMOSFET N-CH 20V .1A SMINI-3
Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Current - Continuous Drain (Id) @ 25° C: 100mA  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 3P
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2SK1058Renesas Technology AmericaMOSFET N-CH 160V 7A TO-3P
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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2SK1058-ERenesas Technology AmericaMOSFET N-CH 160V 7A TO-3P
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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2SK1119(F)ToshibaMOSFET N-CH 1000V 4A TO-220AB
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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2SK122800L2SK122800LPanasonic - SSGMOSFET N-CH 50V 50MA MINI 3-PIN
Rds On (Max) @ Id, Vgs: 50 Ohm @ 10mA, 2.5V  ·  Drain to Source Voltage (Vdss): 50V  ·  Current - Continuous Drain (Id) @ 25° C: 50mA  ·  Input Capacitance (Ciss) @ Vds: 4.5pF @ 5 V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: Mini 3P
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2SK1359ToshibaMOSFET N-CH 1KV 5A 2-16C1B
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK1359(F)ToshibaMOSFET N-CH 1KV 5A 2-16C1B
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK1365ToshibaMOSFET N-CH 1KV 7A 2-16F1B
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16F1B
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2SK1365(F)ToshibaMOSFET N-CH 1KV 7A 2-16F1B
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16F1B
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2SK137400L2SK137400LPanasonic - SSGMOSFET N-CH 50V 50MA SMINI-3
Rds On (Max) @ Id, Vgs: 50 Ohm @ 10mA, 2.5V  ·  Drain to Source Voltage (Vdss): 50V  ·  Current - Continuous Drain (Id) @ 25° C: 50mA  ·  Input Capacitance (Ciss) @ Vds: 4.5pF @ 5 V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 3P
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2SK1374G0L2SK1374G0LPanasonic - SSGMOSFET N-CH 50V .05A SMINI-3
Rds On (Max) @ Id, Vgs: 50 Ohm @ 10mA, 2.5V  ·  Drain to Source Voltage (Vdss): 50V  ·  Current - Continuous Drain (Id) @ 25° C: 50mA  ·  Input Capacitance (Ciss) @ Vds: 4.5pF @ 5 V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: S-Mini 3P
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2SK1381ToshibaMOSFET N-CH 100V 50A 2-16C1B
Rds On (Max) @ Id, Vgs: 32 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 88nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3700pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK1381(F)ToshibaMOSFET N-CH 100V 50A 2-16C1B
Rds On (Max) @ Id, Vgs: 32 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 88nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3700pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK1382(Q)ToshibaMOSFET N-CH 100V 60A TO-3PL
Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 176nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P(L) (2-21F1B)
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2SK1489(Q)ToshibaMOSFET N-CH 1000V 12A TO-3PL
Rds On (Max) @ Id, Vgs: 1 Ohm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 2000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 200W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P(L) (2-21F1B)
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2SK1529-Y(F)ToshibaMOSFET N-CH 180V 10A TO-3PN
Drain to Source Voltage (Vdss): 180V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 120W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK1530-Y(F)2SK1530-Y(F)ToshibaMOSFET N-CH 200V 12A TO-3PL
Drain to Source Voltage (Vdss): 200V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P(L) (2-21F1B)
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2SK1542ToshibaMOSFET N-CH 60V 45A TO-220AB
Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 400nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 3300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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2SK1930(TE24L,Q)ToshibaMOSFET N-CH 1000V 4A TO-220
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-10S2B
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2SK2094TL2SK2094TLRohm SemiconductorMOSFET N-CH 60V 2A DPAK
Rds On (Max) @ Id, Vgs: 350 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 10W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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