Дискретные полупроводники · MOSFET транзисторы (одиночные)

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Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	2SJ378(TP,Q)	Toshiba	MOSFET P-CH 60V 5A TPS Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 630pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Through Hole	from 0,00	Additional information Find at suppliers Buy in store
	2SJ380(F)	Toshiba	MOSFET P-CH 60V 12A TO-220NIS Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: 2-10R1B	from 0,00	Additional information Find at suppliers Buy in store
	2SJ401(Q)	Toshiba	MOSFET P-CH 60V 20A TO-220FL Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 90nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 2800pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-10S1B	from 0,00	Additional information Find at suppliers Buy in store
	2SJ402(Q)	Toshiba	MOSFET P-CH 60V 30A TO-220FL Rds On (Max) @ Id, Vgs: 38 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 3300pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-10S1B	from 0,00	Additional information Find at suppliers Buy in store
	2SJ407(F)	Toshiba	MOSFET P-CH 200V 5A TO-220NIS Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 800pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: 2-10R1B	from 0,00	Additional information Find at suppliers Buy in store
	2SJ412	Toshiba	MOSFET P-CH 100V 16A TO-220FL Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220		Additional information Find at suppliers Buy in store
	2SJ412(Q)	Toshiba	MOSFET P-CH 100V 16A TO-220FL Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SJ412(SM,Q)	Toshiba	MOSFET P-CH 100V 16A TO-220SM Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: 2-10S1B	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SJ412(TE24L,Q)	Toshiba	MOSFET P-CH 100V 16A TO-220SM Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Surface Mount · Package / Case: TO-220SM	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SJ464(F)	Toshiba	MOSFET P-CH 100V 18A TO-220NIS Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 140nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 2900pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10R1B	from 0,00	Additional information Find at suppliers Buy in store
	2SJ516(F)	Toshiba	MOSFET P-CH 250V 6.5A TO-220NIS Rds On (Max) @ Id, Vgs: 800 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 1120pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: 2-10R1B	from 0,00	Additional information Find at suppliers Buy in store
	2SJ567(TE16L1,NQ)	Toshiba	MOSFET P-CH 200V 2.5A PW-MOLD Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.5A · Input Capacitance (Ciss) @ Vds: 410pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B	from 0,00	Additional information Find at suppliers Buy in store
	2SJ610(TE16L1,NQ)	Toshiba	MOSFET P-CH 250V 2A PW-MOLD Rds On (Max) @ Id, Vgs: 2.55 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 381pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B	from 0,00	Additional information Find at suppliers Buy in store
	2SJ618(F)	Toshiba	MOSFET P-CH 180V 10A TO-3 Drain to Source Voltage (Vdss): 180V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2300pF @ 30V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 130W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	from 0,00	Additional information Find at suppliers Buy in store
	2SJ619(TE24L,Q)	Toshiba	MOSFET P-CH 100V 16A SC-97 Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 75W · Mounting Type: Surface Mount	from 0,00	Additional information Find at suppliers Buy in store
	2SJ620(TE24L,Q)	Toshiba	MOSFET P-CH 100V 18A SC-97 Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 140nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 2900pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Surface Mount	from 0,00	Additional information Find at suppliers Buy in store
	2SJ650	SANYO Semiconductor (U.S.A) Co	MOSFET P-CH 60V 12A TO-220ML Rds On (Max) @ Id, Vgs: 135 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1020pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SJ651	SANYO Semiconductor (U.S.A) Co	MOSFET P-CH 60V 20A TO-220ML Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 2200pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SJ655	SANYO Semiconductor (U.S.A) Co	MOSFET P-CH 100V 12A TO-220ML Rds On (Max) @ Id, Vgs: 136 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2090pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SJ656	SANYO Semiconductor (U.S.A) Co	MOSFET P-CH 100V 18A TO-220ML Rds On (Max) @ Id, Vgs: 75.5 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 74nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 4200pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SJ681(Q)	Toshiba	MOSFET P-CH 60V 5A PW-MOLD Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 700pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Through Hole	from 0,00	Additional information Find at suppliers Buy in store
	2SJ683-TL-E	SANYO Semiconductor (U.S.A) Co	MOSFET P-CH 60V 65A ZP Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 290nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 15500pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Surface Mount	from 0,00 to 0,00	Additional information Find at suppliers Buy in store
	2SJ77	Renesas Technology America	MOSFET P-CH 160V 0.5A TO-220 Drain to Source Voltage (Vdss): 160V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 120pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220		Additional information Find at suppliers Buy in store
	2SJ77-E	Renesas Technology America	MOSFET P-CH 160V 0.5A TO-220 Drain to Source Voltage (Vdss): 160V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 120pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220		Additional information Find at suppliers Buy in store
	2SK060100L	Panasonic - SSG	MOSFET N-CH 80V 500MA MINI-PWR Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 80V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 45pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: Mini 3P		Additional information Find at suppliers Buy in store

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