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2SK2231(TE16L1,NQ)

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2SK2231(TE16L1,NQ) — MOSFET N-CH 60V 5A 2-7J1B

ManufacturerToshiba
Harmful substancesRoHS   Lead-free
Pay attentionHalogen Free
Rds On (Max) @ Id, Vgs160 mOhm @ 2.5A, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs12nC @ 10V
Current - Continuous Drain (Id) @ 25° C5A
Input Capacitance (Ciss) @ Vds370pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max20W
Mounting TypeSurface Mount
Package / Case2-7J1B
Found under name2SK2231Q, 2SK2231Q-ND, 2SK2231TE16LCT
Analogous by characteristics
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2SK2838(SM,Q)ToshibaMOSFET N-CH 400V 5.5A TO-220SM
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 720pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10S1B
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TPCS8008-H(TE12L,QToshibaMOSFET N-CH 250V 1.7A 8-TSSOP
Rds On (Max) @ Id, Vgs: 580 mOhm @ 800mA, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 600mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-3R1F
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TPC8045-H(TE12L,QMTPC8045-H(TE12L,QMToshibaMOSFET N-CH 40V 18A 8-SOP
Drain to Source Voltage (Vdss): 40V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SK2749ToshibaMOSFET N-CH 900V 7A 2-16C1B
Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SJ567(TE16L1,NQ)ToshibaMOSFET P-CH 200V 2.5A PW-MOLD
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 410pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-7J1B
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2SK2607ToshibaMOSFET N-CH 800V 9A 2-16C1B
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 2160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK2949(TE24L,Q)ToshibaMOSFET N-CH 400V 10A TO-220
Rds On (Max) @ Id, Vgs: 550 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1340pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 80W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-10S2B
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2SK3757(Q)ToshibaMOSFET N-CH 450V 2A SC-67
Rds On (Max) @ Id, Vgs: 2.45 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 450V  ·  Gate Charge (Qg) @ Vgs: 9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 330pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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2SK3568(Q,M)2SK3568(Q,M)ToshibaMOSFET N-CH 500V 12A TO-220SIS
Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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TPCA8018-H(TE12LQMToshibaMOSFET N-CH 30V 30A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2846pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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TPCA8006-H(TE12LQMToshibaMOSFET N-CH 100V 18A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 67 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 780pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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TK60A08J1(Q)ToshibaMOSFET N-CH 75V 60A SC-67
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 86nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 5450pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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TPCA8051-H(TE12L,QToshibaMOSFET N-CH 80V 28A 8-SOP ADV
Drain to Source Voltage (Vdss): 80V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SK2967ToshibaMOSFET N-CH 250V 30A 2-16C1B
Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 132nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 5400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK1529-Y(F)ToshibaMOSFET N-CH 180V 10A TO-3PN
Drain to Source Voltage (Vdss): 180V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 120W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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TK20D60U(Q)ToshibaMOSFET N-CH 600V 20A TO-220W
Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1470pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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2SK3068(TE24L,Q)ToshibaMOSFET N-CH 500V 12A TO-220FL
Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 2040pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FL
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TPCP8102(TE85L,F)ToshibaMOSFET P-CH 20V 7.3A PS-8
Rds On (Max) @ Id, Vgs: 18 mOhm @ 3.6A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.2A  ·  Input Capacitance (Ciss) @ Vds: 2560pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 840mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-3V1K
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2SK2549(TE12L,F)2SK2549(TE12L,F)ToshibaMOSFET N-CH 16V 2A PW-MINI
Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4V  ·  Drain to Source Voltage (Vdss): 16V  ·  Gate Charge (Qg) @ Vgs: 5nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: PW-MINI
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2SK3846(Q)ToshibaMOSFET N-CH 40V 26A SC-67
Rds On (Max) @ Id, Vgs: 16 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 1980pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10R1B
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2SK2549(TE12L)ToshibaMOSFET N-CH 16V 2A PW-MINI
Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4V  ·  Drain to Source Voltage (Vdss): 16V  ·  Gate Charge (Qg) @ Vgs: 5nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: PW-MINI
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2SK2615(TE12L,F)ToshibaMOSFET N-CH 60V 2A PW-MINI
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 150pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: PW-MINI
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2SK2417(F)ToshibaMOSFET N-CH 250V 7.5A SC-67
Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10R1B
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TPC8021-H(TE12LQ,MToshibaMOSFET N-CH 30V 11A SOP8 2-6J1B
Rds On (Max) @ Id, Vgs: 17 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 640pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-6J1B
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2SK3466(TE24L,Q)ToshibaMOSFET N-CH 500V 5A SC-97
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 780pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount
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