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2SJ412

- Dimensional Drawing

2SJ412 — MOSFET P-CH 100V 16A TO-220FL

ManufacturerToshiba
Rds On (Max) @ Id, Vgs210 mOhm @ 6A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs48nC @ 10V
Current - Continuous Drain (Id) @ 25° C16A
Input Capacitance (Ciss) @ Vds1100pF @ 10V
FET PolarityP-Channel
FET FeatureLogic Level Gate
Power - Max60W
Mounting TypeThrough Hole
Package / CaseTO-220
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2SK1359ToshibaMOSFET N-CH 1KV 5A 2-16C1B
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SJ380(F)ToshibaMOSFET P-CH 60V 12A TO-220NIS
Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10R1B
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TPC6111(TE85L,F)TPC6111(TE85L,F)ToshibaMOSFET P-CH -20V -5.5A VS-6
Drain to Source Voltage (Vdss): 20V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: VS-6 (SOT-23-6)
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2SK2841ToshibaMOSFET N-CH 400V 10A TO-220AB
Rds On (Max) @ Id, Vgs: 550 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1340pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 80W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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2SK3797(Q,M)ToshibaMOSFET N-CH 600V 13A SC-67
Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 62nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 3100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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2SK2968ToshibaMOSFET N-CH 900V 10A 2-16C1B
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 2150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK2601(F)ToshibaMOSFET N-CH 500V 10A 2-16C1B
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SJ412(SM,Q)2SJ412(SM,Q)ToshibaMOSFET P-CH 100V 16A TO-220SM
Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10S1B
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2SK3868(Q,M)ToshibaMOSFET N-CH 500V 5A SC-67
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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Rds On (Max) @ Id, Vgs: 67 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 780pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOPA
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Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 62nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 3100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.8A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 1.35W  ·  Mounting Type: Surface Mount
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Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 2740pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 600mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSSOP
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2SJ338(TE16R1,NQ)ToshibaMOSFET P-CH 180V 1A PW-MOLD
Drain to Source Voltage (Vdss): 180V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 210pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-7J1B
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2SK3132ToshibaMOSFET N-CH 500V 50A TO-3P(L)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 280nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 11000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P(L) (2-21F1B)
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TPC8109(TE12L)TPC8109(TE12L)ToshibaMOSFET P-CH 30V 10A 8-SOP
Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 2260pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SK2847ToshibaMOSFET N-CH 900V 8A 2-16F1B
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 58nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 2040pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 85W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16F1B
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SSM3J36FS(T5L,F,T)ToshibaMOSFET P-CHANNEL 20V SSM
Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 1.2nC @ 4V  ·  Current - Continuous Drain (Id) @ 25° C: 330mA  ·  Input Capacitance (Ciss) @ Vds: 43pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount
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2SK2962(F)2SK2962(F)ToshibaMOSFET N-CH 100V 1A TO-92
Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6.3nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 900mW  ·  Mounting Type: Through Hole
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2SK2777(SM,Q)ToshibaMOSFET N-CH 600V 6A TO-220
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 65W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10S1B
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2SJ349(F,T)ToshibaMOSFET P-CH 60V 20A TO-3
Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 90nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10R1B
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TPC6004(TE85L,F,M)ToshibaMOSFET N-CH 20V 6A VS6 2-3T1A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-3T1A
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2SK1542ToshibaMOSFET N-CH 60V 45A TO-220AB
Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 400nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 3300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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TPCM8002-H(TE12L,QToshibaMOSFET N-CH 30V 30A 8-TSSOP ADV
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2846pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount
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