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2SJ200-Y(F) — MOSFET P-CH 180V 10A TO-3

ManufacturerToshiba
Harmful substancesRoHS   Lead-free
Drain to Source Voltage (Vdss)180V
Current - Continuous Drain (Id) @ 25° C10A
Input Capacitance (Ciss) @ Vds1300pF @ 30V
FET PolarityP-Channel
FET FeatureLogic Level Gate
Power - Max120W
Mounting TypeThrough Hole
Package / Case2-16C1B (TO-247 N)
Analogous by characteristics
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2SK2311(TE24R,Q)ToshibaMOSFET N-CH 60V 25A TO-220FL
Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FL
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2SK2964(TE12L)ToshibaMOSFET N-CH 30V 2A PW-MINI
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 5.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: PW-MINI
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2SK3132(Q)ToshibaMOSFET N-CH 500V 50A TO-3P(L)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 280nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 11000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P(L) (2-21F1B)
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2SK2699ToshibaMOSFET N-CH 600V 12A 2-16C1B
Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 58nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 2600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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2SK2606ToshibaMOSFET N-CH 800V 8A 2-16F1B
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 2160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 85W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16F1B
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2SK3131ToshibaMOSFET N-CH 500V 50A TO-3P(L)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 280nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 11000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P(L) (2-21F1B)
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2SK3562(Q)2SK3562(Q)ToshibaMOSFET N-CH 600V 6A TO-220SIS
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1050pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220 (SIS)
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TPCA8031-H(TE12L,QToshibaMOSFET N-CH 30V 24A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 2150pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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TPCA8028-H(TE12LQMTPCA8028-H(TE12LQMToshibaMOSFET N-CH 30V 50A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 88nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 7800pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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2SK2314ToshibaMOSFET N-CH 100V 27A TO-220AB
Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 75W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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TPCA8048-H(TE12L,QToshibaMOSFET N-CH 60V 35A 8-SOP ADV
Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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TK12A60U(Q)ToshibaMOSFET N-CH 600V 12A SC-67
Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 720pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 40W  ·  Mounting Type: Surface Mount
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Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3550pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-16C1B (TO-247 N)
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TPCF8001(TE85L)TPCF8001(TE85L)ToshibaMOSFET N-CH 30V 7A VS-8
Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 1270pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: VS-8 (2-3U1A)
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TPCS8004(TE12L,Q)ToshibaMOSFET N-CH 200V 1.3A 2-3R1B
Rds On (Max) @ Id, Vgs: 800 mOhm @ 600mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.3A  ·  Input Capacitance (Ciss) @ Vds: 380pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 600mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-3R1B
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2SK3869(Q)ToshibaMOSFET N-CH 450V 10A SC-67
Rds On (Max) @ Id, Vgs: 680 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 450V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1050pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: 2-10U1B
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2SK3301(TE16L1,NQ)ToshibaMOSFET N-CH 900V 1A SC-64
Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1A  ·  Input Capacitance (Ciss) @ Vds: 165pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-7J1B
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TPC8018-H(TE12L,Q)TPC8018-H(TE12L,Q)ToshibaMOSFET N-CH 30V 18A 8-SOP
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 2265pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SJ610(TE16L1,NQ)ToshibaMOSFET P-CH 250V 2A PW-MOLD
Rds On (Max) @ Id, Vgs: 2.55 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 381pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-7J1B
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2SK3388(TE24L,Q)ToshibaMOSFET N-CH 250V 20A SC-97
Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 4000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount
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TK15X60U(TE24L,Q)ToshibaMOSFET N-CH 600V 15A TFP
Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 950pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount
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TPCA8030-H(TE12LQMToshibaMOSFET N-CH 30V 24A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 2150pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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2SK3762(M)ToshibaMOSFET N-CH 900V 2.5A TO-220AB
Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 62W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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TPCA8018-H(TE12L,QToshibaMOSFET N-CH 30V 30A SOP-8 ADV
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2846pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: 2-5Q1A
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