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2N7002T-7-F

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2N7002T-7-F — MOSFET N-CH 60V 115MA SOT-523

ManufacturerDiodes Inc
Harmful substancesRoHS   Lead-free
Pay attentionEncapsulate Change 09/July/2007
Rds On (Max) @ Id, Vgs7.5 Ohm @ 50mA, 5V
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C115mA
Input Capacitance (Ciss) @ Vds50pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-523
Found under name2N7002T-FDICT
Analogous by characteristics
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Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Current - Continuous Drain (Id) @ 25° C: 700mA  ·  Input Capacitance (Ciss) @ Vds: 180pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
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Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 0.74nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 630mA  ·  Input Capacitance (Ciss) @ Vds: 60.67pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 280mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-523
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Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V  ·  Drain to Source Voltage (Vdss): 20V  ·  Current - Continuous Drain (Id) @ 25° C: 440mA  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 3-DFN
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