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2N7002T,215 — MOSFET N-CH 60V 300MA SOT-23

ManufacturerNXP Semiconductors
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C300mA
Input Capacitance (Ciss) @ Vds40pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max830mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Found under name2N7002T T/R, 2N7002T T/R-ND, 934055796215
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 117 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 4.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 195pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 1nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 335mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.1nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.2A  ·  Input Capacitance (Ciss) @ Vds: 495pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-74-6
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 98nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55.5A  ·  Input Capacitance (Ciss) @ Vds: 3680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 2920pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 114W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 127nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 272W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6021pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 253W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 8840pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 230W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 2 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 3980pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 97W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 34V  ·  Gate Charge (Qg) @ Vgs: 53nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2506pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 172W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 212nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 12493pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 306W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.7A  ·  Input Capacitance (Ciss) @ Vds: 959pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 88W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Rds On (Max) @ Id, Vgs: 5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 29nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 84A  ·  Input Capacitance (Ciss) @ Vds: 1760pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 61W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 92nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6021pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 253W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 85W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 62.5A  ·  Input Capacitance (Ciss) @ Vds: 2836pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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BUK7575-55A,127BUK7575-55A,127NXP SemiconductorsMOSFET N-CH 55V 20.3A TO220AB
Series: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 20.3A  ·  Input Capacitance (Ciss) @ Vds: 483pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 62W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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