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Discrete Semiconductor Products  ·  MOSFETs - Single

 

2N7002ET3G — MOSFET N-CH 60V 260MA SOT-23

ПроизводительON Semiconductor
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs2.5 Ohm @ 240mA, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs0.81nC @ 5V
Current - Continuous Drain (Id) @ 25° C260mA
Input Capacitance (Ciss) @ Vds26.7pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max300mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 10mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Current - Continuous Drain (Id) @ 25° C: 210mA  ·  Input Capacitance (Ciss) @ Vds: 11pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 310mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-723
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Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 1072pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-ChipFET™
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Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.7A  ·  Input Capacitance (Ciss) @ Vds: 950pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.13W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 3075pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.4W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1260pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 75W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTD18N06GNTD18N06GON SemiconductorMOSFET N-CH 60V 18A DPAK
Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 710pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 55W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 5.78nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.8A  ·  Input Capacitance (Ciss) @ Vds: 584pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 16V  ·  Gate Charge (Qg) @ Vgs: 10.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.6A  ·  Input Capacitance (Ciss) @ Vds: 702pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.2W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V  ·  Drain to Source Voltage (Vdss): 28V  ·  Gate Charge (Qg) @ Vgs: 29nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 85A  ·  Input Capacitance (Ciss) @ Vds: 2150pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 80W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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NTB60N06T4GON SemiconductorMOSFET N-CH 60V 60A D2PAK
Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 81nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 3220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 720pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 480mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3
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Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 8.5A  ·  Input Capacitance (Ciss) @ Vds: 1330pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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NTGS1135PT1GON SemiconductorMOSFET P-CH 8V 4.6A 6-TSOP
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.6A  ·  Input Capacitance (Ciss) @ Vds: 2200pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 970mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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NTA4001NT1GNTA4001NT1GON SemiconductorMOSFET N-CH 20V 238MA SOT-416
Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Current - Continuous Drain (Id) @ 25° C: 238mA  ·  Input Capacitance (Ciss) @ Vds: 20pF @ 5V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
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Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 880mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 5-DFN, SO8 FL
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NTMS4705NR2GON SemiconductorMOSFET N-CHAN 10A 30V 8-SOIC
Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.4A  ·  Input Capacitance (Ciss) @ Vds: 1078pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 850mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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NTB18N06T4ON SemiconductorMOSFET N-CH 60V 15A D2PAK
Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 450pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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NTD4858NA-1GON SemiconductorMOSFET N-CH 25V 11.2A IPAK
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 19.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11.2A  ·  Input Capacitance (Ciss) @ Vds: 1563pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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NTD12N10GNTD12N10GON SemiconductorMOSFET N-CH 100V 12A DPAK
Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.28W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTMS4503NR2NTMS4503NR2ON SemiconductorMOSFET N-CH 28V 9A 8-SOIC
Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 28V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 930mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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NTF3055-100T1NTF3055-100T1ON SemiconductorMOSFET N-CH 60V 3A SOT223
Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 455pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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NTGS3455T1GNTGS3455T1GON SemiconductorMOSFET P-CH 30V 2.5A 6-TSOP
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 480pF @ 5V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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NTR4003NT3GNTR4003NT3GON SemiconductorMOSFET N-CH 30V 500MA SOT-23
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 1.15nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 21pF @ 5V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 690mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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