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2N7002ET1G

- Dimensional Drawing

2N7002ET1G — MOSFET N-CH 60V 260MA SOT-23

ManufacturerON Semiconductor
Harmful substancesRoHS   Lead-free
Pay attentionPossible Adhesion Issue 11/July/2008
Rds On (Max) @ Id, Vgs2.5 Ohm @ 240mA, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs0.81nC @ 5V
Current - Continuous Drain (Id) @ 25° C260mA
Input Capacitance (Ciss) @ Vds26.7pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max300mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Found under name2N7002ET1G-ND, 2N7002ET1GOSTR
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