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Discrete Semiconductor Products  ·  MOSFETs - Single
 
2N7002E-T1-E3

2N7002E-T1-E3 — MOSFET N-CH 60V 240MA SOT-23

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs3 Ohm @ 250mA, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs0.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C240mA
Input Capacitance (Ciss) @ Vds21pF @ 5V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max350mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IRFPF50PBFIRFPF50PBFVishay/SiliconixMOSFET N-CH 900V 6.7A TO-247AC
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  Input Capacitance (Ciss) @ Vds: 2900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
from 3,31
from 7,29		Additional information
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IRF840LCLVishay/SiliconixMOSFET N-CH 500V 8A TO-262
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 3,35Additional information
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2N7002K-T1-E32N7002K-T1-E3Vishay/SiliconixMOSFET N-CH 60V 300MA SOT-23
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 30pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,04
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IRF614PBFIRF614PBFVishay/SiliconixMOSFET N-CH 250V 2.7A TO-220AB
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 8.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 36W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 0,58
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SI3456BDV-T1-E3SI3456BDV-T1-E3Vishay/SiliconixMOSFET N-CH 30V 4.5A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
from 0,34
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IRFZ34IRFZ34Vishay/SiliconixMOSFET N-CH 60V 30A TO-220AB
Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 88W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,16Additional information
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IRFU9220Vishay/SiliconixMOSFET P-CH 200V 3.6A I-PAK
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  Input Capacitance (Ciss) @ Vds: 340pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
from 2,25Additional information
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IRFU320IRFU320Vishay/SiliconixMOSFET N-CH 400V 3.1A I-PAK
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.1A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRF7822TRRVishay/SiliconixMOSFET N-CH 30V 18A 8-SOIC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 5500pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,17Additional information
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IRFBC40LCPBFIRFBC40LCPBFVishay/SiliconixMOSFET N-CH 600V 6.2A TO-220AB
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.2A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,93
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TP0202K-T1-E3TP0202K-T1-E3Vishay/SiliconixMOSFET P-CH 30V 385MA SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 385mA  ·  Input Capacitance (Ciss) @ Vds: 31pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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IRFD123PBFIRFD123PBFVishay/SiliconixMOSFET N-CH 100V 1.3A 4-DIP
Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.3A  ·  Input Capacitance (Ciss) @ Vds: 360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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IRF730PBFIRF730PBFVishay/SiliconixMOSFET N-CH 400V 5.5A TO-220AB
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 0,70
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IRF9Z34STRLIRF9Z34STRLVishay/SiliconixMOSFET P-CH 60V 18A D2PAK
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRL630LVishay/SiliconixMOSFET N-CH 200V 9A TO-262
Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRF9Z30STRLIRF9Z30STRLVishay/SiliconixMOSFET P-CH 50V 18A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFIBC20GIRFIBC20GVishay/SiliconixMOSFET N-CH 600V 1.7A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRF9Z20SIRF9Z20SVishay/SiliconixMOSFET P-CH 50V 9.7A D2PAK
Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.7A  ·  Input Capacitance (Ciss) @ Vds: 480pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFPC40PBFIRFPC40PBFVishay/SiliconixMOSFET N-CH 600V 6.8A TO-247AC
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.8A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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SI1071X-T1-GE3SI1071X-T1-GE3Vishay/SiliconixMOSFET P-CH 30V 960MA SC89-6
Rds On (Max) @ Id, Vgs: 167 mOhm @ 960mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.64nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 960mA  ·  Input Capacitance (Ciss) @ Vds: 315pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 236mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89-6, SOT-563F, SOT-666
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IRFPS43N50KVishay/SiliconixMOSFET N-CH 500V 47A SUPER247
Rds On (Max) @ Id, Vgs: 90 mOhm @ 28A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 350nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 8310pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 540W  ·  Mounting Type: Through Hole  ·  Package / Case: Super-247
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SI7430DP-T1-GE3SI7430DP-T1-GE3Vishay/SiliconixMOSFET N-CH 150V 26A PPAK 8SOIC
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 1735pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 64W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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IRF540STRLPBFIRF540STRLPBFVishay/SiliconixMOSFET N-CH 100V 28A D2PAK
Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI4896DY-T1-E3SI4896DY-T1-E3Vishay/SiliconixMOSFET N-CH 80V 6.7A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.56W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRFBC40SPBFIRFBC40SPBFVishay/SiliconixMOSFET N-CH 600V 6.2A D2PAK
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.2A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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