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Discrete Semiconductor Products  ·  MOSFETs - Single

 
2N7002E,215

2N7002E,215 — MOSFET N CH TRENCH 60V SOT23

ПроизводительNXP Semiconductors
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs3 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs0.69nC @ 10V
Current - Continuous Drain (Id) @ 25° C385mA
Input Capacitance (Ciss) @ Vds50pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max830mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Встречается под наим.568-4858-6
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
PH3830L,115PH3830L,115NXP SemiconductorsMOSFET N-CH 30V 98A LFPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 98A  ·  Input Capacitance (Ciss) @ Vds: 3190pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
от 1,46
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PSMN030-150P,127PSMN030-150P,127NXP SemiconductorsMOSFET N-CH 150V 55.5A SOT78
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 98nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55.5A  ·  Input Capacitance (Ciss) @ Vds: 3680pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK7604-40A,118BUK7604-40A,118NXP SemiconductorsMOSFET N-CH 40V 75A SOT404
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 117nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5730pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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PSMN1R2-25YL,115NXP SemiconductorsMOSFET N-CH 25V 100A LFPAK
Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 105nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 6380pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 121W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK (4 leads + tab)
от 1,88
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PHP14NQ20T,127PHP14NQ20T,127NXP SemiconductorsMOSFET N-CH 200V 14A SOT78
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 230 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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PMV31XN,215PMV31XN,215NXP SemiconductorsMOSFET N-CH 20V 5.9A SOT-23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 37 mOhm @ 1.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 5.8nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.9A  ·  Input Capacitance (Ciss) @ Vds: 410pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 0,22
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PMN23UN,165PMN23UN,165NXP SemiconductorsMOSFET N-CH 20V 6.3A 6TSOP
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 28 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 10.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.3A  ·  Input Capacitance (Ciss) @ Vds: 740pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-74-6
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BUK7606-75B,118BUK7606-75B,118NXP SemiconductorsMOSFET N-CH 75V 75A D2PAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 91nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 7446pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BUK7905-40AI,127NXP SemiconductorsMOSFET N-CH 40V 75A TO220AB
Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 127nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 272W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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BST82,235BST82,235NXP SemiconductorsMOSFET N-CH 100V 190MA SOT-23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 190mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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PMZ270XN,315NXP SemiconductorsMOSFET N-CH 20V 2.15A SOT883
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 0.72nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.15A  ·  Input Capacitance (Ciss) @ Vds: 34pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-101, SOT-883
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PH6325L,115PH6325L,115NXP SemiconductorsMOSFET N-CH 25V 78.7A LFPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 13.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 78.7A  ·  Input Capacitance (Ciss) @ Vds: 1871pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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BUK9840-55,115BUK9840-55,115NXP SemiconductorsMOSFET N-CH 55V 5A SOT223
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 5V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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PSMN057-200B,118PSMN057-200B,118NXP SemiconductorsMOSFET N-CH 200V 39A SOT404
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 57 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 96nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 39A  ·  Input Capacitance (Ciss) @ Vds: 3750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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PSMN2R2-40PS,127PSMN2R2-40PS,127NXP SemiconductorsMOSFET N-CH 40V 100A TO-220AB3
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 8423pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 306W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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PSMN026-80YS,115NXP SemiconductorsMOSFET N-CH 80V 34A LFPAK
Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 40V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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BUK754R3-75C,127NXP SemiconductorsMOSFET N-CH TRENCH 75V TO220AB-3
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 142nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 11659pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 333W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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PSMN005-55B,118PSMN005-55B,118NXP SemiconductorsMOSFET N-CH 55V 75A SOT404
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 103nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 230W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSH111,215BSH111,215NXP SemiconductorsMOSFET N-CH 55V 335MA SOT-23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 1nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 335mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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PMBF170,235NXP SemiconductorsMOSFET N-CH TRENCH 60V SOT-23
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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BUK9520-55A,127BUK9520-55A,127NXP SemiconductorsMOSFET N-CH 55V 54A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 18 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 54A  ·  Input Capacitance (Ciss) @ Vds: 2210pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 118W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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BUK9E08-55B,127NXP SemiconductorsMOSFET N-CH TRENCH 55V I2PAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 203W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
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PMN34UN,135PMN34UN,135NXP SemiconductorsMOSFET N-CH 30V 4.9A SOT457
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 9.9nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.9A  ·  Input Capacitance (Ciss) @ Vds: 790pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-74-6
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BUK7214-75B,118BUK7214-75B,118NXP SemiconductorsMOSFET N-CH 75V 70A DPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 2612pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 167W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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PHB191NQ06LT,118PHB191NQ06LT,118NXP SemiconductorsMOSFET N-CH 55V 75A D2PAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 95.6nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 7665pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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