Log in    Register
ChipFind Component Selection Catalog
For example: transistor, max232, lt319a
 

Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

Производитель
























Серия















































 
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IRFIBG20GIRFIBG20GVishay/SiliconixMOSFET N-CH 1000V TO-220FP
Drain to Source Voltage (Vdss): 1000V (1kV)  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
from 0,00Additional information
Find at suppliers
Buy in store
ZVN3310FTAZVN3310FTADiodes/ZetexMOSFET N-CH 100V .1A SOT23-3
Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 100mA  ·  Input Capacitance (Ciss) @ Vds: 40pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 330mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
FDT461NFairchild SemiconductorMOSFET N-CH 100V 0.54A SOT-223
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 2 Ohm @ 540mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 540mA  ·  Input Capacitance (Ciss) @ Vds: 74pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.13W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
Additional information
Find at suppliers
Buy in store
FDG361NFDG361NFairchild SemiconductorMOSFET N-CH 100V 0.6A SC70-6
Серия: PowerTrench®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 600mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 600mA  ·  Input Capacitance (Ciss) @ Vds: 153pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 380mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
Additional information
Find at suppliers
Buy in store
MCH3421-TL-ESANYO Semiconductor (U.S.A) CoMOSFET N-CH 100V 0.8A MCPH3
Rds On (Max) @ Id, Vgs: 890 mOhm @ 400mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 4.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 800mA  ·  Input Capacitance (Ciss) @ Vds: 165pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 900mW  ·  Mounting Type: Surface Mount
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
SI2328DS-T1-E3SI2328DS-T1-E3Vishay/SiliconixMOSFET N-CH 100V 1.15A SOT23-3
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.15A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 730mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
BSP296E6327BSP296E6327Infineon TechnologiesMOSFET N-CH 100V 1.1A SOT223
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 17.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.1A  ·  Input Capacitance (Ciss) @ Vds: 364pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.79W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
Additional information
Find at suppliers
Buy in store
BSP296 L6327BSP296 L6327Infineon TechnologiesMOSFET N-CH 100V 1.1A SOT-223
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 17.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.1A  ·  Input Capacitance (Ciss) @ Vds: 364pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.79W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
BSP296 E6433BSP296 E6433Infineon TechnologiesMOSFET N-CH 100V 1.1A SOT-223
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 17.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.1A  ·  Input Capacitance (Ciss) @ Vds: 364pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.79W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
Additional information
Find at suppliers
Buy in store
BSP296 L6433BSP296 L6433Infineon TechnologiesMOSFET N-CH 100V 1.1A SOT-223
Серия: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 17.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.1A  ·  Input Capacitance (Ciss) @ Vds: 364pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.79W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00Additional information
Find at suppliers
Buy in store
IRFD123PBFIRFD123PBFVishay/SiliconixMOSFET N-CH 100V 1.3A 4-DIP
Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.3A  ·  Input Capacitance (Ciss) @ Vds: 360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
IRLD120PBFIRLD120PBFVishay/SiliconixMOSFET N-CH 100V 1.3A 4-DIP
Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.3A  ·  Input Capacitance (Ciss) @ Vds: 490pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
IRFD120PBFIRFD120PBFVishay/SiliconixMOSFET N-CH 100V 1.3A 4-DIP
Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.3A  ·  Input Capacitance (Ciss) @ Vds: 360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
IRFD120IRFD120Vishay/SiliconixMOSFET N-CH 100V 1.3A 4-DIP
Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.3A  ·  Input Capacitance (Ciss) @ Vds: 360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
from 0,00Additional information
Find at suppliers
Buy in store
IRLD120IRLD120Vishay/SiliconixMOSFET N-CH 100V 1.3A 4-DIP
Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.3A  ·  Input Capacitance (Ciss) @ Vds: 490pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
from 0,00Additional information
Find at suppliers
Buy in store
ZXMN10A11GTAZXMN10A11GTADiodes/ZetexMOSFET N-CH 100V 1.3A SOT223
Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 5.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 274pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
IRFL110TRIRFL110TRVishay/SiliconixMOSFET N-CH 100V 1.5A SOT223
Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8.3nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 180pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00Additional information
Find at suppliers
Buy in store
IRLL110TRPBFIRLL110TRPBFVishay/SiliconixMOSFET N-CH 100V 1.5A SOT223
Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6.1nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
IRFL110IRFL110Vishay/SiliconixMOSFET N-CH 100V 1.5A SOT223
Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8.3nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 180pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
IRLL110IRLL110Vishay/SiliconixMOSFET N-CH 100V 1.5A SOT223
Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6.1nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
IRFL110PBFIRFL110PBFVishay/SiliconixMOSFET N-CH 100V 1.5A SOT223
Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8.3nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 180pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00Additional information
Find at suppliers
Buy in store
IRFL110TRPBFIRFL110TRPBFVishay/SiliconixMOSFET N-CH 100V 1.5A SOT223
Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8.3nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 180pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00
to 0,00
Additional information
Find at suppliers
Buy in store
IRLL110TRIRLL110TRVishay/SiliconixMOSFET N-CH 100V 1.5A SOT223
Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6.1nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00Additional information
Find at suppliers
Buy in store
IRLL110PBFIRLL110PBFVishay/SiliconixMOSFET N-CH 100V 1.5A SOT223
Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6.1nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00Additional information
Find at suppliers
Buy in store
IRLM110ATFFairchild SemiconductorMOSFET N-CH 100V 1.5A SOT-223
Rds On (Max) @ Id, Vgs: 440 mOhm @ 750mA, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 8nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 235pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,00Additional information
Find at suppliers
Buy in store
← Ctrl  1 ... 9101112131415 ... 582  Ctrl →

© 2006 — 2024 ChipFind Ltd.
Contact phone, e-mail, ICQ
Catalog with parameters for 1,401,534 components RegisterAdvertising