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Discrete Semiconductor Products  ·  JFETs (Junction Field Effect)

 
TIS75_D26Z

TIS75_D26Z — JFET GP N-CH 30V TO-92

ManufacturerFairchild Semiconductor
Harmful substancesRoHS   Lead-free
Current - Drain (Idss) @ Vds (Vgs=0)8mA @ 15V
FET PolarityN-Channel
Voltage - Breakdown (V(BR)GSS)30V
Voltage - Cutoff (VGS off) @ Id800mV @ 4nA
Input Capacitance (Ciss) @ Vds18pF @ 10V (VGS)
Resistance - RDS(On)60 Ohm
Mounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226
Power - Max350mW
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
TIS75TIS75Fairchild SemiconductorJFET N-CHANNEL TO-92
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V  ·  FET Polarity: N-Channel  ·  Voltage - Breakdown (V(BR)GSS): 30V  ·  Voltage - Cutoff (VGS off) @ Id: 800mV @ 4nA  ·  Input Capacitance (Ciss) @ Vds: 18pF @ 10V (VGS)  ·  Resistance - RDS(On): 60 Ohm  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226  ·  Power - Max: 350mW
from 0,10Additional information
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TIS75_J35ZTIS75_J35ZFairchild SemiconductorJFET GP N-CH 30V TO-92
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V  ·  FET Polarity: N-Channel  ·  Voltage - Breakdown (V(BR)GSS): 30V  ·  Voltage - Cutoff (VGS off) @ Id: 800mV @ 4nA  ·  Input Capacitance (Ciss) @ Vds: 18pF @ 10V (VGS)  ·  Resistance - RDS(On): 60 Ohm  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226  ·  Power - Max: 350mW
from 0,10Additional information
Find at suppliers
TIS75_D75ZTIS75_D75ZFairchild SemiconductorJFET GP N-CH 30V TO-92
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V  ·  FET Polarity: N-Channel  ·  Voltage - Breakdown (V(BR)GSS): 30V  ·  Voltage - Cutoff (VGS off) @ Id: 800mV @ 4nA  ·  Input Capacitance (Ciss) @ Vds: 18pF @ 10V (VGS)  ·  Resistance - RDS(On): 60 Ohm  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226  ·  Power - Max: 350mW
from 0,10Additional information
Find at suppliers

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