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Discrete Semiconductor Products  ·  JFETs (Junction Field Effect)

 

FJZ594JTF — IC FET N-CH SI 20V 100MW SOT623F

ManufacturerFairchild Semiconductor
Harmful substancesRoHS   Lead-free
Current - Drain (Idss) @ Vds (Vgs=0)150µA @ 5V
Current Drain (Id) - Max1mA
FET PolarityN-Channel
Voltage - Cutoff (VGS off) @ Id600mV @ 1µA
Input Capacitance (Ciss) @ Vds3.5pF @ 5V
Mounting TypeSurface Mount
Package / CaseSOT-623F
Power - Max100mW
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
FJZ594JCTFFairchild SemiconductorJFET N-CH SI 20V 100MW SOT623F
Current - Drain (Idss) @ Vds (Vgs=0): 150µA @ 5V  ·  Current Drain (Id) - Max: 1mA  ·  FET Polarity: N-Channel  ·  Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA  ·  Input Capacitance (Ciss) @ Vds: 3.5pF @ 5V  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-623F  ·  Power - Max: 100mW
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FJZ594JBTFFairchild SemiconductorIC FET N-CH SI 20V 100MW SOT623F
Current - Drain (Idss) @ Vds (Vgs=0): 150µA @ 5V  ·  Current Drain (Id) - Max: 1mA  ·  FET Polarity: N-Channel  ·  Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA  ·  Input Capacitance (Ciss) @ Vds: 3.5pF @ 5V  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-623F  ·  Power - Max: 100mW
Additional information
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