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Discrete Semiconductor Products  ·  IGBTs - Single
 
STGW35NB60SD

STGW35NB60SD — MOSFET N-CHAN 35A 600V TO-247

ManufacturerSTMicroelectronics
Harmful substancesRoHS   Lead-free
SeriesPowerMESH™
Voltage - Collector Emitter Breakdown (Max)600V
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 20A
Current - Collector (Ic) (Max)70A
Power - Max200W
Input TypeStandard
Mounting TypeThrough Hole
Package / CaseTO-247-3
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
STGW35NB60SSTGW35NB60SSTMicroelectronicsIGBT N-CH 35A 600V TO-247
Series: PowerMESH™  ·  Voltage - Collector Emitter Breakdown (Max): 600V  ·  Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A  ·  Current - Collector (Ic) (Max): 70A  ·  Power - Max: 200W  ·  Input Type: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 0,96
from 2,23		Additional information
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